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參數(shù)資料
| 型號(hào)： | APTGT50DDA60T3 |
| 廠(chǎng)商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類(lèi)： | IGBT 晶體管 |
| 英文描述： | 80 A, 600 V, N-CHANNEL IGBT |
| 封裝： | MODULE-25 |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大小： | 0K |
| 代理商： | APTGT50DDA60T3 |
APTGT50DDA60T3
A
P
T
G
T
50
D
A
60T
3–
R
ev
0,
M
ay,
2005
APT website – http://www.advancedpower.com
1 - 5
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
600
V
TC= 25°C
80
IC
Continuous Collector Current
TC= 80°C
50
ICM
Pulsed Collector Current
TC= 25°C
100
A
VGE
Gate – Emitter Voltage
±20
V
PD
Maximum Power Dissipation
TC= 25°C
176
W
RBSOA
Reverse Bias Safe Operating Area
TJ = 150°C
100A @ 550V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
23
22
13
Q1
CR1
30
8
Q2
7
14
CR2
16
R1
29
15
26
27
4
3
31
32
16
15
18
20
23 22
13
11 12
14
8
7
29
30
28 27 26
3
32
31
10
19
2
25
4
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 …
VCES = 600V
IC = 50A @ Tc = 80°C
Application
AC and DC motor control
Switched Mode Power Supplies
Power Factor Correction
Features
Trench + Field Stop IGBT Technology
-
Low voltage drop
-
Low tail current
-
Switching frequency up to 20 kHz
-
Soft recovery parallel diodes
-
Low diode VF
-
Low leakage current
-
Avalanche energy rated
-
RBSOA and SCSOA rated
Kelvin emitter for easy drive
Very low stray inductance
-
Symmetrical design
High level of integration
Internal thermistor for temperature monitoring
Benefits
Stable temperature behavior
Very rugged
Solderable terminals for easy PCB mounting
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
Each leg can be easily paralleled to achieve a
single boost of twice the current capability.
Dual Boost chopper
Trench + Field Stop IGBT
Power Module
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PDF描述 |
|---|---|
| APTGT50DDA60T3 | 80 A, 600 V, N-CHANNEL IGBT |
| APTGT50DH170T | 75 A, 1700 V, N-CHANNEL IGBT |
| APTGT50DH170T | 75 A, 1700 V, N-CHANNEL IGBT |
| APTGT50DH60T | 80 A, 600 V, N-CHANNEL IGBT |
| APTGT50DH60T | 80 A, 600 V, N-CHANNEL IGBT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APTGT50DDA60T3G | 功能描述:IGBT MOD TRENCH DL BST CHOP SP3 RoHS:是 類(lèi)別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類(lèi)型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時(shí)的最大Vce（開(kāi)）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時(shí)的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無(wú) 安裝類(lèi)型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B |
| APTGT50DH120T | 制造商:ADPOW 制造商全稱(chēng):Advanced Power Technology 功能描述:Asymmetrical - Bridge Fast Trench + Field Stop IGBT Power Module |
| APTGT50DH120T3G | 制造商:MICROSEMI 制造商全稱(chēng):Microsemi Corporation 功能描述:Asymmetrical - Bridge Fast Trench + Field Stop IGBT Power Module |
| APTGT50DH120TG | 功能描述:IGBT MOD TRENCH ASYM BRIDGE SP4 RoHS:是 類(lèi)別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類(lèi)型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時(shí)的最大Vce（開(kāi)）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時(shí)的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無(wú) 安裝類(lèi)型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B |
| APTGT50DH170T | 制造商:ADPOW 制造商全稱(chēng):Advanced Power Technology 功能描述:Asymmetrical - Bridge Trench + Field Stop IGBT Power Module |
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