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參數(shù)資料
| 型號： | APTGT50TL601G |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 80 A, 600 V, N-CHANNEL IGBT |
| 封裝： | ROHS COMPLIANT, SP1, 12 PIN |
| 文件頁數(shù)： | 1/7頁 |
| 文件大小： | 226K |
| 代理商： | APTGT50TL601G |
APTGT50TL601G
APT
G
T
50T
L
601G–
Rev0
M
ar
ch,
2
009
www.microsemi.com
1- 7
Q1 to Q4 Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
600
V
TC = 25°C
80
IC
Continuous Collector Current
TC = 80°C
50
ICM
Pulsed Collector Current
TC = 25°C
100
A
VGE
Gate – Emitter Voltage
±20
V
PD
Maximum Power Dissipation
TC = 25°C
176
W
RBSOA Reverse Bias Safe Operating Area
TJ = 150°C
100A @ 550V
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
See application note APT0502 on www.microsemi.com
All multiple inputs and outputs must be shorted together
5/6 ; 9/10
VCES = 600V
IC = 50A @ Tc = 80°C
Application
Solar converter
Uninterruptible Power Supplies
Features
Trench + Field Stop IGBT Technology
-
Low voltage drop
-
Low tail current
-
Switching frequency up to 20 kHz
-
Soft recovery parallel diodes
-
Low diode VF
-
Low leakage current
-
RBSOA and SCSOA rated
Very low stray inductance
High level of integration
Benefits
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
RoHS Compliant
Three level inverter
Trench + Field Stop IGBT
Power Module
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| APTGT50TL60T3G | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Three level inverter Trench + Field Stop IGBT Power Module |
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