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參數資料
型號: APTM100AM90F
元件分類: JFETs
英文描述: 78 A, 1000 V, 0.105 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封裝: MODULE-7
文件頁數: 1/6頁
文件大小: 302K
代理商: APTM100AM90F
APTM100AM90F
A
P
T
M
100A
M
90F
–R
ev
1
M
ay,
2005
APT website – http://www.advancedpower.com
1 – 6
VBUS
0/VBUS
Q2
G2
S2
S1
Q1
G1
OUT
VBUS
S1
G1
0/VBUS
G2
S2
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
1000
V
Tc = 25°C
78
ID
Continuous Drain Current
Tc = 80°C
59
IDM
Pulsed Drain current
312
A
VGS
Gate - Source Voltage
±30
V
RDSon
Drain - Source ON Resistance
105
m
PD
Maximum Power Dissipation
Tc = 25°C
1250
W
IAR
Avalanche current (repetitive and non repetitive)
25
A
EAR
Repetitive Avalanche Energy
50
EAS
Single Pulse Avalanche Energy
3000
mJ
VDSS = 1000V
RDSon = 90m typ @ Tj = 25°C
ID = 78A @ Tc = 25°C
Application
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Features
Power MOS 7 FREDFETs
-
Low RDSon
-
Low input and Miller capacitance
-
Low gate charge
-
Fast intrinsic reverse diode
-
Avalanche energy rated
-
Very rugged
Kelvin source for easy drive
Very low stray inductance
-
Symmetrical design
-
M5 power connectors
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Low profile
Phase leg
MOSFET Power Module
相關PDF資料
PDF描述
APTM100AM90F 78 A, 1000 V, 0.105 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
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APTM100H35FT3 22 A, 1000 V, 0.42 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
相關代理商/技術參數
參數描述
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