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參數(shù)資料
| 型號(hào)： | APTM100UM65S-ALN |
| 元件分類： | JFETs |
| 英文描述： | 145 A, 1000 V, 0.078 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MODULE-4 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 311K |
| 代理商： | APTM100UM65S-ALN |
APTM100UM65S-AlN
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APT website – http://www.advancedpower.com
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Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
1000
V
Tc = 25°C
145
ID
Continuous Drain Current
Tc = 80°C
110
IDM
Pulsed Drain current
580
A
VGS
Gate - Source Voltage
±30
V
RDSon
Drain - Source ON Resistance
78
m
PD
Maximum Power Dissipation
Tc = 25°C
3250
W
IAR
Avalanche current (repetitive and non repetitive)
30
A
EAR
Repetitive Avalanche Energy
50
EAS
Single Pulse Avalanche Energy
3200
mJ
VDSS = 1000V
RDSon = 65m typ @ Tj = 25°C
ID = 145A @ Tc = 25°C
Application
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Features
Power MOS 7 MOSFETs
-
Low RDSon
-
Low input and Miller capacitance
-
Low gate charge
-
Avalanche energy rated
-
Very rugged
Kelvin source for easy drive
Very low stray inductance
-
Symmetrical design
-
M5 power connectors
High level of integration
AlN substrate for improved thermal performance
Benefits
Outstanding performance at high frequency
operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Low profile
Single switch
Series & parallel diodes
MOSFET Power Module
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