- 您現在的位置：買賣IC網 > PDF目錄36740 > APTM10HM09FT3 139 A, 100 V, 0.0095 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET PDF資料下載
參數資料
| 型號： | APTM10HM09FT3 |
| 元件分類： | JFETs |
| 英文描述： | 139 A, 100 V, 0.0095 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MODULE-25 |
| 文件頁數： | 1/6頁 |
| 文件大小： | 315K |
| 代理商： | APTM10HM09FT3 |
APTM10HM09FT3
A
P
T
M
10H
M
09F
T
3–
R
ev
0
M
ay,
2005
APT website – http://www.advancedpower.com
1 – 6
11
Q4
14
13
23
Q2
10
8
7
3
4
22
29
31
R1
15
16
32
26
19
18
Q1
Q3
27
30
16
15
18
20
23 22
13
11 12
14
8
7
29
30
28 27 26
3
32
31
10
19
2
25
4
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 …
Absolute maximum ratings
* Specification of MOSFET device but output current must be limited to 75A to not exceed a delta of temperature
greater than 30°C for the connectors.
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
100
V
Tc = 25°C
139
ID
Continuous Drain Current
Tc = 80°C
100 *
IDM
Pulsed Drain current
430
A
VGS
Gate - Source Voltage
±30
V
RDSon
Drain - Source ON Resistance
9.5
m
PD
Maximum Power Dissipation
Tc = 25°C
390
W
IAR
Avalanche current (repetitive and non repetitive)
100
A
EAR
Repetitive Avalanche Energy
50
EAS
Single Pulse Avalanche Energy
3000
mJ
VDSS = 100V
RDSon = 9m typ @ Tj = 25°C
ID = 139A @ Tc = 25°C
Application
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Features
Power MOS V FREDFETs
-
Low RDSon
-
Low input and Miller capacitance
-
Low gate charge
-
Fast intrinsic diode
-
Avalanche energy rated
-
Very rugged
Kelvin source for easy drive
Very low stray inductance
-
Symmetrical design
Internal thermistor for temperature monitoring
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
Each leg can be easily paralleled to achieve a phase
leg of twice the current capability
Full - Bridge
MOSFET Power Module
相關PDF資料 |
PDF描述 |
|---|---|
| APTM10HM09FT3 | 139 A, 100 V, 0.0095 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM10HM09FT | 139 A, 100 V, 0.0095 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM10HM09FT | 139 A, 100 V, 0.0095 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM10HM19FT3 | 70 A, 100 V, 0.02 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM10HM19FT3 | 70 A, 100 V, 0.02 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| APTM10HM09FT3G | 功能描述:MOSFET MODULE FULL BRIDGE SP3 RoHS:是 類別:半導體模塊 >> FET 系列:- 標準包裝:10 系列:* |
| APTM10HM09FTG | 功能描述:MOSFET MODULE FULL BRIDGE SP4 RoHS:是 類別:半導體模塊 >> FET 系列:- 標準包裝:10 系列:* |
| APTM10HM19FT3 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Full - Bridge MOSFET Power Module |
| APTM10HM19FT3G | 功能描述:MOSFET MOD FULL BRIDGE 100V SP3 RoHS:是 類別:半導體模塊 >> FET 系列:- 標準包裝:10 系列:* |
| APTM10SKM02 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Buck chopper MOSFET Power Module |
發布緊急采購，3分鐘左右您將得到回復。