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參數資料
型號: APTM10TAM09FP
廠商: MICROSEMI POWER PRODUCTS GROUP
元件分類: JFETs
英文描述: 139 A, 100 V, 0.009 ohm, 6 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封裝: MODULE-21
文件頁數: 1/6頁
文件大小: 311K
代理商: APTM10TAM09FP
APTM10TAM09FP
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APT website – http://www.advancedpower.com
1 – 6
W
VBUS1
VBUS2
VBUS3
0/VBUS3
V
G5
G6
S5
S6
0/VBUS1
S2
G2
G1
S1
0/VBUS2
U
S3
S4
G3
G4
S5
G5
G6
S6
VBUS 2
0/VBUS 3
VBUS 3
0/VBUS 2
W
V
G4
S4
G3
S3
VBUS 1
0/VBUS 1
S1
G1
S2
G2
U
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
100
V
Tc = 25°C
139
ID
Continuous Drain Current
Tc = 80°C
100
IDM
Pulsed Drain current
430
A
VGS
Gate - Source Voltage
±30
V
RDSon
Drain - Source ON Resistance
9
m
PD
Maximum Power Dissipation
Tc = 25°C
390
W
IAR
Avalanche current (repetitive and non repetitive)
100
A
EAR
Repetitive Avalanche Energy
50
EAS
Single Pulse Avalanche Energy
3000
mJ
VDSS = 100V
RDSon = 09m max @ Tj = 25°C
ID = 139A @ Tc = 25°C
Application
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Features
Power MOS V FREDFETs
-
Low RDSon
-
Low input and Miller capacitance
-
Low gate charge
-
Fast intrinsic diode
-
Avalanche energy rated
-
Very rugged
Kelvin source for easy drive
Very low stray inductance
-
Symmetrical design
-
Lead frames for power connections
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Very low (12mm) profile
Each leg can be easily paralleled to achieve a phase
leg of three times the current capability
Module can be configured as a three phase bridge
Module can be configured as a boost followed by a
full bridge
Triple phase leg
MOSFET Power Module
相關PDF資料
PDF描述
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相關代理商/技術參數
參數描述
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