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參數資料
型號: APTM10TDUM09P
元件分類: JFETs
英文描述: 139 A, 100 V, 0.009 ohm, 6 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封裝: MODULE-21
文件頁數: 1/6頁
文件大小: 310K
代理商: APTM10TDUM09P
APTM10TDUM09P
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APT website – http://www.advancedpower.com
1 – 6
S3/S4
G5
D5
S5
S5/S6
S1
D1
G1
S1/S2
S3
D3
G3
D6
S6
G6
D2
G2
S2
D4
S4
G4
G5
G6
S6
S5
G3
D 3
D 5
S3/S4
G4
S4
D 6
D 4
S3
D 1
S5/S6
S2
G2
S1
G1
D 2
S1/S2
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
100
V
Tc = 25°C
139
ID
Continuous Drain Current
Tc = 80°C
100
IDM
Pulsed Drain current
430
A
VGS
Gate - Source Voltage
±30
V
RDSon
Drain - Source ON Resistance
9
m
PD
Maximum Power Dissipation
Tc = 25°C
390
W
IAR
Avalanche current (repetitive and non repetitive)
100
A
EAR
Repetitive Avalanche Energy
50
EAS
Single Pulse Avalanche Energy
3000
mJ
VDSS = 100V
RDSon = 9m max @ Tj = 25°C
ID = 139A @ Tc = 25°C
Application
AC Switches
Switched Mode Power Supplies
Uninterruptible Power Supplies
Features
Power MOS V MOSFETs
-
Low RDSon
-
Low input and Miller capacitance
-
Low gate charge
-
Avalanche energy rated
-
Very rugged
Kelvin source for easy drive
Very low stray inductance
-
Symmetrical design
-
Lead frames for power connections
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Very low (12mm) profile
Each leg can be easily paralleled to achieve a dual
common source configuration of three times the
current capability
Triple dual common source
MOSFET Power Module
相關PDF資料
PDF描述
APTM120A20S 50 A, 1200 V, 0.2 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
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APTM120SK56T1G 18 A, 1200 V, 0.672 ohm, N-CHANNEL, Si, POWER, MOSFET
APTM120U10SA 116 A, 1200 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET
APTM120U10SA 116 A, 1200 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET
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