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參數資料
| 型號： | APTM120DA30T1G |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 31 A, 1200 V, 0.36 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, SP1, 12 PIN |
| 文件頁數： | 1/5頁 |
| 文件大小： | 144K |
| 代理商： | APTM120DA30T1G |
APTM120DA30T1G
APT
M
120DA30T1G
–
Rev
0
Decem
ber,
2007
www.microsemi.com
1 – 5
11
CR1
Q2
10
9
12
NTC
12
3
4
6
5
Pins 1/2 ; 3/4 ; 5/6 must be shorted together
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
1200
V
Tc = 25°C
31
ID
Continuous Drain Current
Tc = 80°C
23
IDM
Pulsed Drain current
195
A
VGS
Gate - Source Voltage
±30
V
RDSon
Drain - Source ON Resistance
360
m
Ω
PD
Maximum Power Dissipation
Tc = 25°C
657
W
IAR
Avalanche current (repetitive and non repetitive)
25
A
Application
AC and DC motor control
Switched Mode Power Supplies
Power Factor Correction
Features
Power MOS 8 MOSFETs
-
Low RDSon
-
Low input and Miller capacitance
-
Low gate charge
-
Avalanche energy rated
-
Very rugged
Very low stray inductance
Internal thermistor for temperature monitoring
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
RoHS Compliant
Boost chopper
MOSFET Power Module
VDSS = 1200V
RDSon = 300mΩ typ @ Tj = 25°C
ID = 31A @ Tc = 25°C
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