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參數(shù)資料
| 型號： | APTM120SK15 |
| 元件分類： | JFETs |
| 英文描述： | 60 A, 1200 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MODULE-5 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 303K |
| 代理商： | APTM120SK15 |
APTM120SK15
A
P
T
M
120S
K
15
–R
ev
0
J
ul
y,
2004
APT website – http://www.advancedpower.com
1 – 6
Q1
S1
OUT
0/VBUS
CR2
VBUS
G1
OUT
G1
S1
0/VBUS
VBUS
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
1200
V
Tc = 25°C
60
ID
Continuous Drain Current
Tc = 80°C
45
IDM
Pulsed Drain current
240
A
VGS
Gate - Source Voltage
±30
V
RDSon
Drain - Source ON Resistance
150
m
PD
Maximum Power Dissipation
Tc = 25°C
1250
W
IAR
Avalanche current (repetitive and non repetitive)
22
A
EAR
Repetitive Avalanche Energy
50
EAS
Single Pulse Avalanche Energy
3000
mJ
VDSS = 1200V
RDSon = 150m max @ Tj = 25°C
ID = 60A @ Tc = 25°C
Application
AC and DC motor control
Switched Mode Power Supplies
Features
Power MOS 7 MOSFETs
-
Low RDSon
-
Low input and Miller capacitance
-
Low gate charge
-
Avalanche energy rated
-
Very rugged
Kelvin source for easy drive
Very low stray inductance
-
Symmetrical design
-
M5 power connectors
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Low profile
Buck chopper
MOSFET Power Module
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APTM120SK15G | 功能描述:MOSFET N-CH 1200V 60A SP6 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:* |
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| APTM120SK29TG | 功能描述:MOSFET N-CH 1200V 34A SP4 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:* |
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| APTM120SK68T1G | 功能描述:MOSFET N-CH 1200V 15A SP1 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:* |
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