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參數(shù)資料
| 型號： | APTM20UM09SG |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 195 A, 200 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數(shù)： | 1/7頁 |
| 文件大小： | 285K |
| 代理商： | APTM20UM09SG |
APTM20UM09S
A
PT
M
20U
M
09S
–
R
ev
1
M
ay,
2004
APT website – http://www.advancedpower.com
1 – 7
D
Q1
G
S
CR1
SK
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
200
V
Tc = 25°C
195
ID
Continuous Drain Current
Tc = 80°C
145
IDM
Pulsed Drain current
780
A
VGS
Gate - Source Voltage
±30
V
RDSon
Drain - Source ON Resistance
9
m
W
PD
Maximum Power Dissipation
Tc = 25°C
780
W
IAR
Avalanche current (repetitive and non repetitive)
65
A
EAR
Repetitive Avalanche Energy
30
EAS
Single Pulse Avalanche Energy
1300
mJ
VDSS = 200V
RDSon = 9m max @ Tj = 25°C
ID = 195A @ Tc = 25°C
Application
Motor control
Switched Mode Power Supplies
Uninterruptible Power Supplies
Features
Power MOS 7 MOSFETs
-
Low RDSon
-
Low input and Miller capacitance
-
Low gate charge
-
Avalanche energy rated
-
Very rugged
Kelvin source for easy drive
Low stray inductance
-
M6 power connectors
-
M4 signal connectors
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Single switch
Series & parallel diodes
MOSFET Power Module
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| APTM20UM09S | 195 A, 200 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET |
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| APTM50AM17F | 180 A, 500 V, 0.017 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM50AM19F | 163 A, 500 V, 0.019 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
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