欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數資料
型號: APTM50HM75FT3
廠商: MICROSEMI POWER PRODUCTS GROUP
元件分類: JFETs
英文描述: 46 A, 500 V, 0.075 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封裝: MODULE-25
文件頁數: 1/6頁
文件大小: 321K
代理商: APTM50HM75FT3
APTM50HM75FT3
A
P
T
M
50H
M
75F
T
3
R
ev
0
S
ept
em
be
r,
2004
APT website – http://www.advancedpower.com
1 – 6
11
Q4
14
13
23
Q2
10
8
7
3
4
22
29
31
R1
15
16
32
26
19
18
Q1
Q3
27
30
16
15
18
20
23 22
13
11 12
14
8
7
29
30
28 27 26
3
32
31
10
19
2
25
4
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 …
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
500
V
Tc = 25°C
46
ID
Continuous Drain Current
Tc = 80°C
34
IDM
Pulsed Drain current
184
A
VGS
Gate - Source Voltage
±30
V
RDSon
Drain - Source ON Resistance
75
m
PD
Maximum Power Dissipation
Tc = 25°C
357
W
IAR
Avalanche current (repetitive and non repetitive)
46
A
EAR
Repetitive Avalanche Energy
50
EAS
Single Pulse Avalanche Energy
2500
mJ
VDSS = 500V
RDSon = 75m max @ Tj = 25°C
ID = 46A @ Tc = 25°C
Application
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Features
Power MOS 7 FREDFETs
-
Low RDSon
-
Low input and Miller capacitance
-
Low gate charge
-
Fast intrinsic reverse diode
-
Avalanche energy rated
-
Very rugged
Kelvin source for easy drive
Very low stray inductance
-
Symmetrical design
Internal thermistor for temperature monitoring
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
Each leg can be easily paralleled to achieve a phase
leg of twice the current capability
Full - Bridge
MOSFET Power Module
相關PDF資料
PDF描述
APTM50UM09F-ALN 497 A, 500 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET
APTM60A11FT1G 40 A, 600 V, 0.11 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
APTM60A23UT1G 20 A, 600 V, 0.276 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
APTM60H23FT1G 20 A, 600 V, 0.23 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
APTML1002U60R020T3AG 20 A, 1000 V, 0.72 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
相關代理商/技術參數
參數描述
APTM50HM75FT3G 功能描述:MOSFET MODULE FULL BRIDGE SP3 RoHS:是 類別:半導體模塊 >> FET 系列:- 標準包裝:10 系列:*
APTM50HM75FTG 功能描述:MOSFET MODULE FULL BRIDGE SP4 RoHS:是 類別:半導體模塊 >> FET 系列:- 標準包裝:10 系列:*
APTM50HM75SCT 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Full bridge Series & SiC parallel diodes MOSFET Power Module
APTM50HM75SCTG 功能描述:MOSFET MOD FULL BRDG SER/SIC SP4 RoHS:是 類別:半導體模塊 >> FET 系列:- 標準包裝:10 系列:*
APTM50HM75STG 功能描述:MOSFET MOD FULL BRDG SER/PAR SP4 RoHS:是 類別:半導體模塊 >> FET 系列:- 標準包裝:10 系列:*
主站蜘蛛池模板: 恩施市| 海南省| 微博| 通道| 龙井市| 平和县| 朔州市| 吉林省| 内丘县| 吉木乃县| 和林格尔县| 株洲县| 平度市| 噶尔县| 白银市| 宁安市| 大姚县| 通辽市| 黄大仙区| 拜城县| 乌海市| 蓬莱市| 蒲江县| 临潭县| 平顺县| 大同县| 明溪县| 诏安县| 长丰县| 抚松县| 扬中市| 桐柏县| 颍上县| 漳浦县| 海原县| 平凉市| 溆浦县| 盐山县| 普格县| 龙泉市| 夹江县|