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參數(shù)資料
型號(hào): APTM60A11FT1G
廠商: MICROSEMI POWER PRODUCTS GROUP
元件分類: JFETs
英文描述: 40 A, 600 V, 0.11 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封裝: ROHS COMPLIANT PACKAGE-12
文件頁數(shù): 1/5頁
文件大小: 139K
代理商: APTM60A11FT1G
APTM60A11FT1G
APT
M
60A11FT
1
G
Rev
0
Februar
y
,2010
www.microsemi.com
1 – 5
1
8
7
Q1
Q2
56
3
4
11
NTC
12
9
10
2
Pins 1/2 ; 3/4 ; 5/6 must be shorted together
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
600
V
Tc = 25°C
40
ID
Continuous Drain Current
Tc = 80°C
30
IDM
Pulsed Drain current
245
A
VGS
Gate - Source Voltage
±30
V
RDSon
Drain - Source ON Resistance
110
m
Ω
PD
Maximum Power Dissipation
Tc = 25°C
390
W
IAR
Avalanche current (repetitive and non repetitive)
33
A
Application
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Features
Power MOS 8 FREDFETs
-
Low RDSon
-
Low input and Miller capacitance
-
Low gate charge
-
Fast intrinsic reverse diode
-
Avalanche energy rated
-
Very rugged
Very low stray inductance
-
Symmetrical design
Internal thermistor for temperature monitoring
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
RoHS Compliant
Phase leg
MOSFET Power Module
VDSS = 600V
RDSon = 90mΩ typ @ Tj = 25°C
ID = 40A @ Tc = 25°C
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
APTM60A11UT1G 制造商:Microsemi Corporation 功能描述:POWER MOSFET TRANSISTOR
APTM60A23FT1G 功能描述:MOSFET MODULE PHASE LEG SP1 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:*
APTM60A23UT1G 制造商:Microsemi Corporation 功能描述:POWER MOSFET TRANSISTOR
APTM60H23FT1G 功能描述:MOSFET MODULE FULL BRIDGE SP1 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:*
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