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參數資料
| 型號： | APTM50TAM65FP |
| 元件分類： | JFETs |
| 英文描述： | 51 A, 500 V, 0.065 ohm, 6 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MODULE-21 |
| 文件頁數： | 1/6頁 |
| 文件大小： | 316K |
| 代理商： | APTM50TAM65FP |
APTM50TAM65FP
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APT website – http://www.advancedpower.com
1 – 6
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VBUS1
VBUS2
VBUS3
0/VBUS3
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G5
G6
S5
S6
0/VBUS1
S2
G2
G1
S1
0/VBUS2
U
S3
S4
G3
G4
S5
G5
G6
S6
VBUS 2
0/VBUS 3
VBUS 3
0/VBUS 2
W
V
G4
S4
G3
S3
VBUS 1
0/VBUS 1
S1
G1
S2
G2
U
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
500
V
Tc = 25°C
51
ID
Continuous Drain Current
Tc = 80°C
38
IDM
Pulsed Drain current
204
A
VGS
Gate - Source Voltage
±30
V
RDSon
Drain - Source ON Resistance
65
m
PD
Maximum Power Dissipation
Tc = 25°C
390
W
IAR
Avalanche current (repetitive and non repetitive)
51
A
EAR
Repetitive Avalanche Energy
50
EAS
Single Pulse Avalanche Energy
3000
mJ
VDSS = 500V
RDSon = 65m max @ Tj = 25°C
ID = 51A @ Tc = 25°C
Application
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Features
Power MOS 7 FREDFETs
-
Low RDSon
-
Low input and Miller capacitance
-
Low gate charge
-
Fast intrinsic reverse diode
-
Avalanche energy rated
-
Very rugged
Kelvin source for easy drive
Very low stray inductance
-
Symmetrical design
-
Lead frames for power connections
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Very low (12mm) profile
Each leg can be easily paralleled to achieve a phase
leg of three times the current capability
Module can be configured as a three phase bridge
Module can be configured as a boost followed by a
full bridge
Triple phase leg
MOSFET Power Module
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