- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄36742 > APTM60A23FT1G (MICROSEMI POWER PRODUCTS GROUP) 20 A, 600 V, 0.23 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號： | APTM60A23FT1G |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 20 A, 600 V, 0.23 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT PACKAGE-12 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 187K |
| 代理商： | APTM60A23FT1G |
APTM60A23FT1G
APT
M
60A23FT
1G
–
Rev
0
Febr
ua
ry
,2010
www.microsemi.com
1 – 5
1
8
7
Q1
Q2
56
3
4
11
NTC
12
9
10
2
Pins 1/2 ; 3/4 ; 5/6 must be shorted together
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
600
V
Tc = 25°C
20
ID
Continuous Drain Current
Tc = 80°C
15
IDM
Pulsed Drain current
125
A
VGS
Gate - Source Voltage
±30
V
RDSon
Drain - Source ON Resistance
230
m
Ω
PD
Maximum Power Dissipation
Tc = 25°C
208
W
IAR
Avalanche current (repetitive and non repetitive)
17
A
Application
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Features
Power MOS 8 FREDFETs
-
Low RDSon
-
Low input and Miller capacitance
-
Low gate charge
-
Fast intrinsic reverse diode
-
Avalanche energy rated
-
Very rugged
Very low stray inductance
-
Symmetrical design
Internal thermistor for temperature monitoring
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
RoHS Compliant
Phase leg
MOSFET Power Module
VDSS = 600V
RDSon = 190mΩ typ @ Tj = 25°C
ID = 20A @ Tc = 25°C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APTML100U60R020T1AG | 20 A, 1000 V, 0.72 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APTML102UM09R004T3AG | 154 A, 100 V, 0.01 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTML10UM09R004T1AG | 67 A, 100 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APTML602U12R020T3AG | 45 A, 600 V, 0.15 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| AQ1L2N | 2000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APTM60A23UT1G | 制造商:Microsemi Corporation 功能描述:POWER MOSFET TRANSISTOR |
| APTM60H23FT1G | 功能描述:MOSFET MODULE FULL BRIDGE SP1 RoHS:是 類別:半導體模塊 >> FET 系列:- 標準包裝:10 系列:* |
| APTM60H23UT1G | 制造商:Microsemi Corporation 功能描述:POWER MOSFET TRANSISTOR |
| APTMC120AM08CD3AG | 制造商:Microsemi Corporation 功能描述:SILICON CARBIDE DISCRETES/MODULES 制造商:Microsemi Corporation 功能描述:SILICON CARBIDE POWER TRANSISTORS/MODULES |
| APTMC120AM09CT3AG | 功能描述:MOSFET 2N-CH 1200V 295A SP3F 制造商:microsemi corporation 系列:- 包裝:散裝 零件狀態(tài):有效 FET 類型:2 N 溝道（相角） FET 功能:標準 漏源極電壓（Vdss）:1200V（1.2kV） 電流 - 連續(xù)漏極（Id）（25°C 時）:295A 不同?Id，Vgs 時的?Rds On（最大值）:9 毫歐 @ 200A，20V 不同 Id 時的 Vgs（th）（最大值）:2.4V @ 40mA（標準） 不同 Vgs 時的柵極電荷（Qg）:644nC @ 20V 不同 Vds 時的輸入電容（Ciss）:11000pF @ 1000V 功率 - 最大值:1250W 工作溫度:-40°C ~ 150°C（TJ） 安裝類型:底座安裝 封裝/外殼:SP3 供應(yīng)商器件封裝:SP3 標準包裝:1 |
發(fā)布緊急采購，3分鐘左右您將得到回復。