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參數(shù)資料
型號(hào): APTML50UM90R020T1AG
廠商: MICROSEMI POWER PRODUCTS GROUP
元件分類: JFETs
英文描述: 52 A, 500 V, 0.108 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: ROHS COMPLIANT, SP1, 12 PIN
文件頁(yè)數(shù): 1/3頁(yè)
文件大小: 100K
代理商: APTML50UM90R020T1AG
APTML50UM90R020T1AG
APT
M
L
50UM
90R020T
1AG
Rev
1
M
arch,
2010
www.microsemi.com
1 – 3
Pins 1/2 ; 5/6 must be shorted together
Absolute maximum ratings
* Output current must be limited to 31A @ TC=25°C and 22A @ TC=80°C to not exceed the shunt specification.
In saturation mode
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
500
V
Tc = 25°C
52*
ID
Continuous Drain Current
Tc = 80°C
39*
IDM
Pulsed Drain current
200
A
VGS
Gate - Source Voltage
±30
V
RDSon
Drain - Source ON Resistance
108
m
Ω
PD
Maximum Power Dissipation
Tc = 25°C
568
W
IAR
Avalanche current (repetitive and non repetitive)
52
A
EAR
Repetitive Avalanche Energy
50
EAS
Single Pulse Avalanche Energy
3000
mJ
Application
Electronic load dedicated to power supplies and
battery discharge testing
Features
Linear MOSFET
Very low stray inductance
Internal thermistor for temperature monitoring
High level of integration
AlN substrate for improved thermal performance
Benefits
Direct mounting to heatsink (isolated package)
easy series and parallels combinations for power and
voltage improvements
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
RoHS Compliant
Linear MOSFET
Power Module
VDSS = 500V
RDSon = 90mΩ typ @ Tj = 25°C
ID = 52A* @ Tc = 25°C
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相關(guān)代理商/技術(shù)參數(shù)
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