- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄57953 > ARF460A (MICROSEMI POWER PRODUCTS GROUP) VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-247AD PDF資料下載
參數(shù)資料
| 型號(hào)： | ARF460A |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-247AD |
| 封裝： | TO-247, 3 PIN |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大小： | 138K |
| 代理商： | ARF460A |
ARF460A/G
ARF460B/G
125V, 150W, 65MHz
The ARF460A and ARF460B comprise a symmetric pair of common source RF power
transistors designed for push-pull scientic, commercial, medical and industrial RF power
amplier applications up to 65MHz. They have been optimized for both linear and high
efciency classes of operation.
Low Cost Common Source RF Package.
Low Vth thermal coefcient.
Low Thermal Resistance.
Optimized SOA for Superior Ruggedness
RoHS Compliant
Symbol
Parameter
ARF460AG/BG
Unit
V
DSS
Drain-Source Voltage
500
V
DGO
Drain-Gate Voltage
500
I
D
Continuous Drain Current @ T
C = 25°C
14
A
V
GS
Gate-Source Voltage
±30
V
P
D
Total Power Dissipation @ T
C = 25°C
250
W
R
θJC
Junction to Case
0.50
°C/W
T
J, TSTG
Operating and Storage Junction Temperature Range
-55 to 150
°C
T
L
Lead Temperature: 0.063” from Case for 10 Sec.
300
Maximum Ratings
All Ratings: T
C =25°C unless otherwise specied
Static Electrical Characteristics
Symbol
Parameter
Min
Typ
Max
Unit
BV
DSS
Drain-Source Breakdown Voltage (V
GS = 0V, ID = 250 μA)
500
V
DS(ON)
On State Drain Voltage 1 (I
D(ON) = 7A, VGS = 10V)
4
I
DSS
Zero Gate Voltage Drain Current (V
DS = VDSS, VGS = 0V)
25
μA
Zero Gate Voltage Drain Current (V
DS = 0.8VDSS, VGS = 0, TC = 125°C)
250
I
GSS
Gate-Source Leakage Current (V
DS = ±30V, VDS = 0V)
±100
nA
g
fs
Forward Transconductance (V
DS = 25V, ID = 7A)
3.3
5.5
8
mhos
V
GS(TH)
Gate Threshold Voltage (V
DS = VGS, ID = 50mA)
3
5
Volts
Microsemi Website - http://www.microsemi.com
050-5966
Rev
E
10-2007
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
RF POWER MOSFET
N-CHANNEL ENHANCEMENT MODE
Specied 125 Volt, 40.68MHz Characteristics:
Output Power = 150 Watts.
Gain = 13dB (Class AB)
Efciency = 75% (Class C)
TO
-2
47
Common
Source
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ARF460B | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-247AD |
| ARF474 | 2 CHANNEL, VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| ARF520 | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| ARF521 | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| ARJ109 | 0.5 MHz - 200 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ARF460AG | 功能描述:FET RF N-CH 500V 14A TO247 RoHS:是 類(lèi)別:分離式半導(dǎo)體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標(biāo)準(zhǔn)包裝:3,000 系列:- 晶體管類(lèi)型:N 通道 JFET 頻率:- 增益:- 電壓 - 測(cè)試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測(cè)試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產(chǎn)品目錄頁(yè)面:1558 (CN2011-ZH PDF) 其它名稱(chēng):MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| ARF460B | 制造商:MICROSEMI 制造商全稱(chēng):Microsemi Corporation 功能描述:RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE |
| ARF460BG | 功能描述:FET RF N-CH 500V 14A TO247 RoHS:是 類(lèi)別:分離式半導(dǎo)體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標(biāo)準(zhǔn)包裝:3,000 系列:- 晶體管類(lèi)型:N 通道 JFET 頻率:- 增益:- 電壓 - 測(cè)試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測(cè)試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產(chǎn)品目錄頁(yè)面:1558 (CN2011-ZH PDF) 其它名稱(chēng):MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| ARF461 | 制造商:International Rectifier 功能描述:CONV DC-DC SNGL OUT -50 TO 50VIN - Bulk |
| ARF461/EM | 制造商:International Rectifier 功能描述:CONV DC-DC SNGL OUT -50 TO 50VIN - Bulk |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。