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參數資料
| 型號： | AS4LC1M16E5-60TI |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 3V 1M X 6 CMOS DRAM (EDO) |
| 中文描述： | 3V的100萬× 6的CMOS的DRAM（江戶） |
| 文件頁數： | 5/22頁 |
| 文件大小： | 604K |
| 代理商： | AS4LC1M16E5-60TI |
AS4LC1M16E5
4/11/01
Alliance Semiconductor
5
AC parameters common to all waveforms
Shaded areas indicate advance information.
Read cycle
Shaded areas indicate advance information.
Symbol
Parameter
-50
-60
Unit
Notes
Min
Max
Min
Max
t
RC
t
RP
t
RAS
t
CAS
t
RCD
t
RAD
t
RSH
t
CSH
t
CRP
t
ASR
t
RAH
t
T
t
REF
t
CP
t
RAL
t
ASC
t
CAH
Random read or write cycle time
80
–
100
–
ns
RAS precharge time
30
–
40
–
ns
RAS pulse width
50
10K
60
10K
ns
CAS pulse width
8
10K
10
10K
ns
RAS to CAS delay time
15
35
15
43
ns
9
RAS to column address delay time
9
25
10
30
ns
10
CAS to RAS hold time
10
–
10
–
ns
RAS to CAS hold time
40
–
50
–
ns
CAS to RAS precharge time
5
–
5
–
ns
Row address setup time
0
–
0
–
ns
Row address hold time
8
–
10
–
ns
Transition time (rise and fall)
1
50
1
50
ns
7,8
Refresh period
–
16
–
16
ms
6
CAS precharge time
8
–
10
–
ns
Column address to RAS lead time
25
–
30
–
ns
Column address setup time
0
–
0
–
ns
Column address hold time
8
–
10
–
ns
Symbol
Parameter
-50
-60
Unit
Notes
Min
Max
Min
Max
t
RAC
t
CAC
t
AA
t
RCS
t
RCH
t
RRH
Access time from RAS
–
50
–
60
ns
9
Access time from CAS
–
12
–
15
ns
9,16
Access time from address
–
25
–
30
ns
10,16
Read command setup time
0
–
0
–
ns
Read command hold time to CAS
0
–
0
–
ns
12
Read command hold time to RAS
0
–
0
–
ns
12
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相關代理商/技術參數 |
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| AS4LC1M16EC6/883 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 EDO Page Mode DRAM |
| AS4LC1M16EC7/883 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 EDO Page Mode DRAM |
| AS4LC1M16EC8/883 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 EDO Page Mode DRAM |
| AS4LC1M16ECG6/883 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 EDO Page Mode DRAM |
| AS4LC1M16ECG7/883 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 EDO Page Mode DRAM |
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