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參數(shù)資料
| 型號(hào)： | AS5C512K8ECJ-30 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 512K x 8 SRAM HIGH SPEED SRAM with REVOLUTIONARY PINOUT |
| 中文描述： | 為512k × 8的SRAM高速SRAM和革命引腳排列 |
| 文件頁(yè)數(shù)： | 2/16頁(yè) |
| 文件大小： | 416K |
| 代理商： | AS5C512K8ECJ-30 |
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SRAM
AS5C512K8
Austin Semiconductor, Inc.
AS5C512K8
Rev. 4.5 7/01
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
2
FUNCTIONAL BLOCK DIAGRAM
TRUTH TABLE
MODE
STANDBY
READ
NOT SELECTED
WRITE
X = Don’t Care
OE\ CE\ WE\
X
H
L
L
H
L
X
L
I/O
POWER
X
H
H
L
HIGH-Z STANDBY
Q
ACTIVE
HIGH-Z ACTIVE
D
ACTIVE
S
N
O
I
C
N
U
F
N
I
P
8
1
A
-
0
A
s
p
n
s
s
e
r
d
A
\
E
W
e
a
n
E
e
W
\
E
C
e
a
n
E
p
C
\
E
O
e
a
n
E
t
p
O
O
/
0
O
/
-
7
s
p
O
/
p
n
a
D
V
C
C
r
w
o
P
V
S
S
d
n
u
o
r
G
C
N
n
o
e
n
n
o
C
o
N
VCC
GND
I
4,194,304-BIT
MEMORY ARRAY
1024 ROWS X
4096 COLUMNS
I
C
COLUMN DECODER
R
*POWER
DOWN
CE\
OE\
WE\
DQ8
DQ1
A0-A18
*On the low voltage Data Retention option.
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PDF描述 |
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| AS6VA5128 | 2.7V to 3.3V 512K X 8 Intelliwatt low-power CMOS SRAM |
| AS6VA5128-BC | 2.7V to 3.3V 512K X 8 Intelliwatt low-power CMOS SRAM |
| AS6VA5128-BI | 2.7V to 3.3V 512K X 8 Intelliwatt low-power CMOS SRAM |
| AS6VA5128 | 2.7V to 3.3V 512K × 8 Intelliwatt low-power CMOS SRAM(2.7V 到 3.3V 512K × 8 Intelliwatt 低功耗 CMOS 靜態(tài)RAM) |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AS5C512K8ECJ-30/IT | 制造商:AUSTIN 制造商全稱:Austin Semiconductor 功能描述:512K x 8 SRAM HIGH SPEED SRAM with REVOLUTIONARY PINOUT |
| AS5C512K8ECJ-30/XT | 制造商:AUSTIN 制造商全稱:Austin Semiconductor 功能描述:512K x 8 SRAM HIGH SPEED SRAM with REVOLUTIONARY PINOUT |
| AS5C512K8ECJ-35 | 制造商:AUSTIN 制造商全稱:Austin Semiconductor 功能描述:512K x 8 SRAM HIGH SPEED SRAM with REVOLUTIONARY PINOUT |
| AS5C512K8ECJ-35/883 | 制造商:Micross Components, Inc. 功能描述:SRAM, 4MB - Trays |
| AS5C512K8ECJ-35/883C | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 SRAM |
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