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參數資料
| 型號： | AS5C512K8ECJ-30 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 512K x 8 SRAM HIGH SPEED SRAM with REVOLUTIONARY PINOUT |
| 中文描述： | 為512k × 8的SRAM高速SRAM和革命引腳排列 |
| 文件頁數： | 6/16頁 |
| 文件大小： | 416K |
| 代理商： | AS5C512K8ECJ-30 |
SRAM
AS5C512K8
Austin Semiconductor, Inc.
AS5C512K8
Rev. 4.5 7/01
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
6
LOW V
CC
DATA RETENTION WAVEFORM
READ CYCLE NO. 1
8, 9
(Address Controlled, CE\ = OE\ = V
IL
, WE\ = V
IH
)
READ CYCLE NO. 2
2
(WE\ = V
IH
)
1234
1234
1234
1234
Don’t Care
Undefined
123456
123456
123456
123456
123456
123456789012345
123456789012345
123456789012345
123456789012345
123456789012345
123456789012345
123456789012345
123456789012345
123456789012345
123456789012345
123456789012345
123456789012345
123456789012345
123456789012345
123456789012345
123456789012345
DATA RETENTION MODE
4.5V
4.5V
V
DR
>2V
V
DR
t
CDR
t
R
V
CC
CE\
V
IH
-
V
IL
-
ADDRESS
t
RC
123412345678901
123412345678901
123412345678901
123412345678901
123412345678901
123412345678901
1234567
1234567
1234567
1234567
1234567
1234567
t
OH
t
AA
Previous Data Valid
Data Valid
I/O, DATA IN
& OUT
VALID
ADDRESS
t
RC
t
AOE
CE\
t
LZOE
t
ACE
123451234567
123451234567
123451234567
123451234567
123451234567
123451234567
Data Valid
High-Z
t
HZOE
t
HZCE
t
PD
I/O, DATA IN
& OUT
Icc
t
LZCE
t
PU
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| AS6VA5128 | 2.7V to 3.3V 512K × 8 Intelliwatt low-power CMOS SRAM(2.7V 到 3.3V 512K × 8 Intelliwatt 低功耗 CMOS 靜態RAM) |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| AS5C512K8ECJ-30/IT | 制造商:AUSTIN 制造商全稱:Austin Semiconductor 功能描述:512K x 8 SRAM HIGH SPEED SRAM with REVOLUTIONARY PINOUT |
| AS5C512K8ECJ-30/XT | 制造商:AUSTIN 制造商全稱:Austin Semiconductor 功能描述:512K x 8 SRAM HIGH SPEED SRAM with REVOLUTIONARY PINOUT |
| AS5C512K8ECJ-35 | 制造商:AUSTIN 制造商全稱:Austin Semiconductor 功能描述:512K x 8 SRAM HIGH SPEED SRAM with REVOLUTIONARY PINOUT |
| AS5C512K8ECJ-35/883 | 制造商:Micross Components, Inc. 功能描述:SRAM, 4MB - Trays |
| AS5C512K8ECJ-35/883C | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 SRAM |
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