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參數(shù)資料
| 型號(hào)： | ASI10752 |
| 廠商： | ADVANCED SEMICONDUCTOR INC |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大小： | 18K |
| 代理商： | ASI10752 |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25 °C
SYMBOL
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
UNITS
ICBO
VCB = 8 V
100
nA
IEBO
VEB = 1.0 V
1.0
A
hFE
VCE = 8.0 V
IC = 7.0 mA
50
250
---
CCB
VCB = 10 V
0.6
pF
ft
VCE = 10 V
IC = 20 mA
f = 1.0 GHz
8.0
8.5
GHz
S
21E
2
VCE = 8 V
IC = 20 mA
f = 2.0 GHz
10
11
dB
NF
GA
VCE = 8 V
IC = 10 mA
f = 2.0 GHz
10
1.6
11
2.5
dB
NPN SILICON LOW NOISE RF TRANSISTOR
NE64535
DESCRIPTION:
The
ASI NE64535 is a Common
Emitter Device Designed for Low Noise
Class A Amplifier Applications up to 4.0
GHz.
FEATURES INCLUDE:
N
F = 1.6 dB Typical @ 2 GHz
S
21E
2 = 11 dB Typical @ 2 GHz
Hermetic Ceramic Package
MAXIMUM RATINGS:
IC
60 mA
VCBO
25 V
VCEO
12 V
VEBO
1.5 V
PDISS
300 mW @ TA
≤ 75 OC
TJ
-65 °C to +200 °C
TSTG
-65 °C to +150 °C
θθθθ
JC
85 °C/W
PACKAGE STYLE .085 4L SQ
1 = Collector
2 & 4 = Emitter
3 = Base
ORDER CODE: ASI10752
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