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參數資料
| 型號： | AT-32032-BLK |
| 廠商： | AGILENT TECHNOLOGIES INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SC-70, 3 PIN |
| 文件頁數： | 1/14頁 |
| 文件大?。?/td> | 127K |
| 代理商： | AT-32032-BLK |
Agilent AT-32032
Low Current, High Performance
NPN Silicon Bipolar Transistor
Data Sheet
Description
Agilent’s AT-32032 is a high
performance NPN bipolar
transistor that has been optimized
for maximum ft at low voltage
operation, making it ideal for use
in battery powered applications in
cellular/PCS and other wireless
markets. The AT-32032 uses the
miniature 3 lead SOT-323 (SC-70)
plastic package.
Optimized performance at 2.7 V
makes this device ideal for use in
900 MHz, 1.8 GHz, and 2.4 GHz
systems. Typical amplifier design
at 900 MHz yields 1 dB noise
figures with 15 dB associated gain
at 2.7 V and 5 mA bias condition,
with noise performance being
relatively insensitive to input
match. High gain capability at 1 V
and 1 mA makes this device a
good fit for 900 MHz pager
applications. Moreover, voltage
breakdown is high enough for use
at 5 V.
The AT-32032 belongs to Agilent’s
AT-3XXXX series bipolar
transistors. It exhibits excellent
device uniformity, performance
and reliability as a result of ion-
implantation, self-alignment
techniques, and gold metalization
in the fabrication process.
3-Lead SC-70 (SOT-323)
Surface Mount Plastic
Package
Pin Configuration
Features
High Performance Bipolar
Transistor Optimized for
Low Current, Low Voltage
Applications at 900 MHz,
1.8 GHz, and 2.4 GHz
Performance at 2.7 V, 5 mA:
900 MHz: 1 dB NF, 15 dB GA
1800 MHz: 1.3 dB NF, 11 dB GA
2400 MHz: 1.4 dB NF, 7.5 dB GA
Characterized for End-Of-
Life Battery Use (2.7 V)
Miniature 3-lead SOT-323
(SC-70) Plastic Package
Lead-free Option Available
Applications
LNA, Oscillator, Driver
Amplifier, Buffer Amplifier,
and Down Converter for
Cellular and PCS Handsets
and Cordless Telephones
LNA, Oscillator, Mixer, and
Gain Amplifier for Pagers
Power Amplifier and
Oscillator for RF-ID Tag
LNA and Gain Amplifier for
GPS
LNA for CATV Set-Top Box
BASE
EMITTER
COLLECTOR
32
相關PDF資料 |
PDF描述 |
|---|---|
| AT-32032-BLKG | S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-32032-TR1G | S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-32032-BLKG | S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-32032-BLK | S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-32032-TR2G | S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
相關代理商/技術參數 |
參數描述 |
|---|---|
| AT-32032-BLKG | 功能描述:射頻雙極小信號晶體管 Transistor Si Low Current RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發射極最大電壓 VCEO:15 V 發射極 - 基極電壓 VEBO:2 V 集電極連續電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| AT-32032-TR1 | 功能描述:IC TRANS NPN BIPOLAR SOT-323 RoHS:否 類別:分離式半導體產品 >> RF 晶體管 (BJT) 系列:- 產品變化通告:Product Discontinuation 17/Dec/2010 標準包裝:1 系列:- 晶體管類型:NPN 電壓 - 集電極發射極擊穿（最大）:4.7V 頻率 - 轉換:47GHz 噪聲系數（dB典型值@頻率）:0.5dB ~ 1.45dB @ 150MHz ~ 10GHz 增益:9dB ~ 31dB 功率 - 最大:160mW 在某 Ic、Vce 時的最小直流電流增益 (hFE):160 @ 25mA，3V 電流 - 集電極 (Ic)（最大）:45mA 安裝類型:表面貼裝 封裝/外殼:4-SMD，扁平引線 供應商設備封裝:4-TSFP 包裝:Digi-Reel® 其它名稱:BFP 740FESD E6327DKR |
| AT-32032-TR1G | 功能描述:射頻雙極小信號晶體管 Transistor Si Low Current RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發射極最大電壓 VCEO:15 V 發射極 - 基極電壓 VEBO:2 V 集電極連續電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| AT-32032-TR2 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 5.5V V(BR)CEO | 40MA I(C) | SOT-323 |
| AT-32032-TR2G | 功能描述:射頻雙極小信號晶體管 Transistor Si Low Current RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發射極最大電壓 VCEO:15 V 發射極 - 基極電壓 VEBO:2 V 集電極連續電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
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