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參數(shù)資料
| 型號： | AT-32032-BLK |
| 元件分類： | 小信號晶體管 |
| 英文描述： | S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | ROHS COMPLIANT, MINIATURE, PLASTIC, SC-70, 3 PIN |
| 文件頁數(shù)： | 1/14頁 |
| 文件大小： | 1157K |
| 代理商： | AT-32032-BLK |
AT-32032
Low Current, High Performance
NPN Silicon Bipolar Transistor
Data Sheet
Description
Avago’s AT-32032 is a high performance NPN bipolar
transistor that has been optimized for maximum ft at
low voltage operation, making it ideal for use in battery
powered applications in cellular/PCS and other wireless
markets. The AT-32032 uses the miniature 3 lead SOT-323
(SC-70) plastic package.
Optimized performance at 2.7 V makes this device ideal
for use in 900 MHz, 1.8 GHz, and 2.4 GHz systems. Typical
amplifier design at 900 MHz yields 1 dB noise figures with
15 dB associated gain at 2.7 V and 5 mA bias condition,
with noise performance being relatively insensitive to
input match. High gain capability at 1 V and 1 mA makes
this device a good fit for 900 MHz pager applications.
Moreover, voltage breakdown is high enough for use
at 5 V.
The AT-32032 belongs to Avago’s AT-3XXXX series bipolar
transistors. It exhibits excellent device uniformity, per-
formance and reliability as a result of ion-implantation,
self-alignment techniques, and gold metalization in the
fabrication process.
Features
High Performance Bipolar Transistor Optimized for Low
Current, Low Voltage Applications at 900 MHz, 1.8 GHz,
and 2.4 GHz
Performance at 2.7 V, 5 mA:
900 MHz: 1 dB NF, 15 dB GA
1800 MHz: 1.3 dB NF, 11 dB GA
2400 MHz: 1.4 dB NF, 7.5 dB G
Characterized for End-Of-Life Battery Use (2.7 V)
Miniature 3-lead SOT-323 (SC-70) Plastic Package
Lead-free
Applications
LNA, Oscillator, Driver Amplifier, Buffer Amplifier, and
Down Converter for Cellular and PCS Handsets and
Cordless Telephones
LNA, Oscillator, Mixer, and Gain Amplifier for Pagers
Power Amplifier and Oscillator for RF-ID Tag
LNA and Gain Amplifier for GPS
LNA for CATV Set-Top Box
3-Lead SC-70 (SOT-323)
Surface Mount Plastic Package
Pin Configuration
BASE
EMITTER
COLLECTOR
32
相關(guān)PDF資料 |
PDF描述 |
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| AT-32032-TR2G | S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-32032-TR2 | S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-32032-TR1 | S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-32033-TR1 | S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-32033-BLKG | S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AT-32032-BLKG | 功能描述:射頻雙極小信號晶體管 Transistor Si Low Current RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| AT-32032-TR1 | 功能描述:IC TRANS NPN BIPOLAR SOT-323 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> RF 晶體管 (BJT) 系列:- 產(chǎn)品變化通告:Product Discontinuation 17/Dec/2010 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類型:NPN 電壓 - 集電極發(fā)射極擊穿（最大）:4.7V 頻率 - 轉(zhuǎn)換:47GHz 噪聲系數(shù)（dB典型值@頻率）:0.5dB ~ 1.45dB @ 150MHz ~ 10GHz 增益:9dB ~ 31dB 功率 - 最大:160mW 在某 Ic、Vce 時(shí)的最小直流電流增益 (hFE):160 @ 25mA，3V 電流 - 集電極 (Ic)（最大）:45mA 安裝類型:表面貼裝 封裝/外殼:4-SMD，扁平引線 供應(yīng)商設(shè)備封裝:4-TSFP 包裝:Digi-Reel® 其它名稱:BFP 740FESD E6327DKR |
| AT-32032-TR1G | 功能描述:射頻雙極小信號晶體管 Transistor Si Low Current RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| AT-32032-TR2 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 5.5V V(BR)CEO | 40MA I(C) | SOT-323 |
| AT-32032-TR2G | 功能描述:射頻雙極小信號晶體管 Transistor Si Low Current RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
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