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參數(shù)資料
| 型號(hào)： | AT-41435G |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | CERAMIC, 35 MICRO-X-4 |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大?。?/td> | 139K |
| 代理商： | AT-41435G |
AT-41435
Up to 6 GHz Low Noise Silicon Bipolar Transistor
Data Sheet
Features
Low Noise Figure:
1.7 dB Typical at 2.0 GHz
3.0 dB Typical at 4.0 GHz
High Associated Gain:
14.0 dB Typical at 2.0 GHz
10.0 dB Typical at 4.0 GHz
High Gain-Bandwidth Product: 8.0 GHz Typical fT
Cost Effective Ceramic Microstrip Package
Description
Avago’s AT-41435 is a general purpose NPN bipolar tran-
sistor that offers excellent high frequency performance.
The AT-41435 is housed in a cost effective surface mount
100 mil micro-X package. The 4 micron emitter-to-emitter
pitch enables this transistor to be used in many different
functions. The 14 emitter finger interdigitated geometry
yields an intermediate sized transistor with impedances
that are easy to match for low noise and moderate power
applications. This device is designed for use in low noise,
wideband amplifier, mixer and oscillator applications in the
VHF, UHF, and microwave frequencies. An optimum noise
match near 50 at 1 GHz, makes this device easy to use as
a low noise amplifier.
The AT-41435 bipolar transistor is fabricated using Avago’s
10 GHz fT Self-Aligned-Transistor (SAT) process. The die is
nitride passivated for surface protection. Excellent device
uniformity,performanceandreliabilityareproducedbythe
useofion-implantation,self-alignmenttechniques,andgold
metalization in the fabrication of this device.
35 micro-X Package
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AT-41435 | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-41435G | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-41435 | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-41486-BLK | S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-41486-TR1 | S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
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