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參數資料
| 型號： | AT-42000-GP4G |
| 廠商： | AGILENT TECHNOLOGIES INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | DIE-2 |
| 文件頁數： | 2/5頁 |
| 文件大小： | 56K |
| 代理商： | AT-42000-GP4G |
4-150
AT-42000 Absolute Maximum Ratings
Absolute
Symbol
Parameter
Units
Maximum[1]
VEBO
Emitter-Base Voltage
V
1.5
VCBO
Collector-Base Voltage
V
20
VCEO
Collector-Emitter Voltage
V
12
IC
Collector Current
mA
80
PT
Power Dissipation [2,3]
mW
600
Tj
Junction Temperature
°C
200
TSTG
Storage Temperature
°C
-65 to 200
Thermal Resistance[2,4]:
θ
jc = 70°C/W
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. TMounting Surface = 25°C.
3. Derate at 14.3 mW/
°C for
TMountingSurface > 158°C.
4. The small spot size of this tech-
nique results in a higher, though
more accurate determination of
θ
jc
than do alternate methods. See
MEASUREMENTS section
“Thermal Resistance” for more
information.
Part Number Ordering Information
Part Number
Devices Per Tray
AT-42000-GP4
100
Electrical Specifications, TA = 25°C
Symbol
Parameters and Test Conditions[1]
Units
Min.
Typ.
Max.
|S21E|
2
Insertion Power Gain; VCE = 8 V, IC = 35 mA
f = 2.0 GHz
dB
11.5
f = 4.0 GHz
5.5
P1 dB
Power Output @ 1 dB Gain Compression
f = 2.0 GHz
dBm
21.0
VCE = 8 V, IC = 35 mA
f= 4.0 GHz
20.5
G1 dB
1 dB Compressed Gain; VCE = 8 V, IC = 35 mA
f = 2.0 GHz
dB
15.0
f = 4.0 GHz
10.0
NFO
Optimum Noise Figure: VCE = 8 V, IC = 10 mA
f = 2.0 GHz
dB
1.9
f = 4.0 GHz
3.0
GA
Gain @ NFO; VCE = 8 V, IC = 10 mA
f = 2.0 GHz
dB
14.0
f = 4.0 GHz
10.5
fT
Gain Bandwidth Product: VCE = 8 V, IC = 35 mA
GHz
9.0
hFE
Forward Current Transfer Ratio; VCE = 8 V, IC = 35 mA
—
30
150
270
ICBO
Collector Cutoff Current; VCB = 8 V
A
0.2
IEBO
Emitter Cutoff Current; VEB = 1 V
A
2.0
CCB
Collector Base Capacitance[2]: VCB = 8 V, f = 1 MHz
pF
0.23
Notes:
1. RF performance is determined by packaging and testing 10 devices per wafer.
2. For this test, the emitter is grounded.
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相關代理商/技術參數 |
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|---|---|
| AT42010 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 80MA I(C) | SOT-100VAR |
| AT-42010 | 功能描述:射頻雙極小信號晶體管 Transistor Si RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發射極最大電壓 VCEO:15 V 發射極 - 基極電壓 VEBO:2 V 集電極連續電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| AT42035 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 80MA I(C) | MICRO-X |
| AT-42035 | 制造商:AVAGO 制造商全稱:AVAGO TECHNOLOGIES LIMITED 功能描述:Up to 6 GHz Medium Power Silicon Bipolar Transistor |
| AT-42035-BLK | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 80MA I(C) | MICRO-X |
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