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參數資料
| 型號： | AT-42035 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | CERAMIC, MICROSTRIP-4 |
| 文件頁數： | 1/5頁 |
| 文件大小： | 65K |
| 代理商： | AT-42035 |
AT-42035
Up to 6 GHz Medium Power
Silicon Bipolar Transistor
Data Sheet
Features
High Output Power:
21.0 dBm Typical P1 dB at 2.0 GHz
20.5 dBm Typical P1 dB at 4.0 GHz
High Gain at 1 dB Compression:
14.0 dB Typical G1 dB at 2.0 GHz
9.5 dB Typical G1 dB at 4.0 GHz
Low Noise Figure:
1.9 dB Typical NFO at 2.0 GHz
High Gain-Bandwidth Product: 8.0 GHz Typical fT
Cost Effective Ceramic Microstrip Package
Lead-free Option Available
35 micro-X Package
Description
Avago’s AT-42035 is a general purpose NPN bipolar
transistor that offers excellent high frequency perfor-
mance. The AT-42035 is housed in a cost effective
surface mount 100 mil micro-X package. The 4 micron
emitter-to-emitter pitch enables this transistor to be
used in many different functions. The 20 emitter finger
interdigitated geometry yields a medium sized transis-
tor with impedances that are easy to match for low
noise and medium power applications. This device is
designed for use in low noise, wideband amplifier,
mixer and oscillator applications in the VHF, UHF, and
microwave frequencies. An optimum noise match near
50
up to 1 GHz, makes this device easy to use as a low
noise amplifier.
The AT-42035 bipolar transistor is fabricated using
Avago’s 10 GHz fT Self-Aligned-Transistor (SAT) pro-
cess. The die is nitride passivated for surface protection.
Excellent device uniformity, performance and reliability
are produced by the use of ion-implantation, self-align-
ment techniques, and gold metalization in the fabrica-
tion of this device.
相關PDF資料 |
PDF描述 |
|---|---|
| AT-42036-BLK | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-42036-TR1G | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-42036-TR1 | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-42036-BLKG | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-42036-BLK | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
相關代理商/技術參數 |
參數描述 |
|---|---|
| AT-42035-BLK | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 80MA I(C) | MICRO-X |
| AT-42035G | 功能描述:射頻雙極小信號晶體管 Transistor Si RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發射極最大電壓 VCEO:15 V 發射極 - 基極電壓 VEBO:2 V 集電極連續電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| AT-42035-TR1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 80MA I(C) | MICRO-X |
| AT-42036 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:General purpose transistor |
| AT-42036-BLK | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 80MA I(C) | MICRO-X |
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