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參數資料
| 型號： | AT006N3-93 |
| 廠商： | Alpha Industries, Inc. |
| 英文描述： | GaAs 30 dB IC Voltage Variable Dual Control Attenuator DC-8 GHz |
| 中文描述： | 砷化鎵30分貝IC電壓可變衰減器的雙控制的DC - 8千兆赫 |
| 文件頁數： | 1/2頁 |
| 文件大小： | 175K |
| 代理商： | AT006N3-93 |
Alpha Industries, Inc.
[781] 935-5150
Fax
[617] 824-4579
Email
sales@alphaind.com
www.alphaind.com
Specifications subject to change without notice. 3/99A
1
GaAs 30 dB IC Voltage Variable Dual
Control Attenuator DC–6 GHz
Features
I
30 dB Range
I
Low DC Drain
I
Fast Switching
I
Capable of Meeting MIL-STD
Requirements
5
Chip Outline
AT006N3-00
Description
The AT006N3-00 chip is a GaAs FET MMIC non-reflective
bridged “T” attenuator that provides over 30 dB of
“matched”attenuation.The input and output VSWR is less
than 1.5:1 maximum under all attenuation values.
Applications for these fast attenuators are AGC circuits
and variable level control in high reliability and
telecommunications systems.
0.000
0
0.940
0.601
1
0.840
0.100
0
0
1
0
0
1. All measurements made in a 50
system, unless otherwise specified.
2. Insertion loss changes by 0.003 dB/°C.
3.Video feedthru measured with 1 ns risetime pulse and 500 MHz bandwidth.
4. DC = 300 kHz.
5. See Quality/Reliability section.
Parameter
Condition
Frequency
Min.
Typ.
7
10
20
±0.5
±1.0
±1.5
±2.0
-8 (-4)
-3 (0)
Max.
Unit
ns
ns
mV
dB
dB
dB
dB
dBm
dBm
Switching Characteristics
Rise, Fall (10/90% or 90/10% RF)
On, Off (50% CTL to 90/10% RF)
Video Feedthru
3
0–10 dB
11–20 dB
21–30 dB
31–Max.
0.1 dB
1.0 dB
V
Low
= 0 to -0.2 V @ 20
μ
A Max.
V
High
= -5 V @ 50
μ
A Max.
Attenuation Flatness
DC–6 GHz
Compression Point for all Attenuation
Levels 50 MHz (> 500 MHz)
Control Voltages
Operating Characteristics at 25°C
Parameter
1
Frequency
4
DC–1.0 GHz
DC–2.0 GHz
DC–4.0 GHz
DC–6.0 GHz
DC–1.0 GHz
DC–2.0 GHz
DC–4.0 GHz
DC–6.0 GHz
DC–2.0 GHz
DC–4.0 GHz
DC–6.0 GHz
Min.
Typ.
0.8
1.0
1.2
1.5
38
35
32
30
1.2:1
1.4:1
1.5:1
Max.
1.0
1.2
1.4
1.7
Unit
dB
dB
dB
dB
dB
dB
dB
dB
Insertion Loss
2
Attenuation Range
30
29
26
25
VSWR (I/O)
1.3:1
1.5:1
1.6:1
Electrical Specifications at 25°C
Dimensions indicated in mm.
All DC (V) pads are 0.1 x 0.1 mm and RF In, Out pads are 0.07 mm wide.
Chip thickness = 0.1 mm.
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