- 您現在的位置：買賣IC網 > PDF目錄366589 > AT866LTS36 (POSEICO SPA) PHASE CONTROL THYRISTOR PDF資料下載
參數資料
| 型號： | AT866LTS36 |
| 廠商： | POSEICO SPA |
| 英文描述： | PHASE CONTROL THYRISTOR |
| 中文描述： | 相位控制晶閘管 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 43K |
| 代理商： | AT866LTS36 |
PHASE CONTROL THYRISTOR
AT866
Repetitive voltage up to
Mean on-state current
Surge current
3600
V
2165
A
29.1
kA
FINAL SPECIFICATION
feb 97 - ISSUE : 02
Symbol
Characteristic
Conditions
Tj
[°C]
Value
Unit
BLOCKING
V
RRM
Repetitive peak reverse voltage
125
3600
V
V
RSM
Non-repetitive peak reverse voltage
125
3700
V
V
DRM
Repetitive peak off-state voltage
125
3600
V
I
RRM
Repetitive peak reverse current
V=VRRM
125
250
mA
I
DRM
CONDUCTING
I
T (AV)
Repetitive peak off-state current
V=VDRM
125
250
mA
Mean on-state current
180° sin, 50 Hz, Th=55°C, double side cooled
2165
A
I
T (AV)
Mean on-state current
180° sin, 50 Hz, Tc=85°C, double side cooled
1720
A
I
TSM
Surge on-state current
sine wave, 10 ms
125
29.1
kA
I2 t
I2 t
without reverse voltage
4234 x1E3
A2s
V
T
On-state voltage
On-state current =
2000 A
25
1.85
V
V
T(TO)
Threshold voltage
125
1.2
V
r
T
On-state slope resistance
SWITCHING
di/dt
Critical rate of rise of on-state current, min.
125
0.325
mohm
From 75% VDRM up to 2400 A, gate 40V 5ohm 125
200
A/μs
dv/dt
Critical rate of rise of off-state voltage, min.
Linear ramp up to 70% of VDRM
125
1000
V/μs
td
Gate controlled delay time, typical
VD=100V, gate source 40V, 10 ohm , tr=.5 μs
25
3
μs
tq
Circuit commutated turn-off time, typical
dV/dt = 20 V/μs linear up to 75% VDRM
400
μs
Q rr
Reverse recovery charge
di/dt=-20 A/μs, I= 1570 A
125
μC
I rr
Peak reverse recovery current
VR= 50 V
A
I
H
Holding current, typical
VD=5V, gate open circuit
25
300
mA
I
L
Latching current, typical
VD=12V, tp=30μs
25
1000
mA
GATE
V
GT
Gate trigger voltage
VD=12V
25
3.5
V
I
GT
Gate trigger current
VD=12V
25
400
mA
V
GD
Non-trigger gate voltage, min.
VD=VDRM
125
0.25
V
V
FGM
Peak gate voltage (forward)
30
V
I
FGM
Peak gate current
10
A
V
RGM
Peak gate voltage (reverse)
5
V
P
GM
Peak gate power dissipation
Pulse width 100 μs
150
W
P
G
Average gate power dissipation
MOUNTING
R
th(j-h)
Thermal impedance, DC
2
W
Junction to heatsink, double side cooled
11
°C/kW
R
th(c-h)
Thermal impedance
Case to heatsink, double side cooled
2
°C/kW
T
j
F
Operating junction temperature
Mounting force
Mass
-30 / 125
40.0 / 50.0
1700
°C
kN
g
ORDERING INFORMATION : AT866 S 36
standard specification
VDRM&VRRM/100
Via N. Lorenzi 8 - I 16152 GENOVA - ITALY
Tel. int. +39/(0)10 6556549 - (0)10 6556488
Fax Int. +39/(0)10 6442510
Tx 270318 ANSUSE I -
ANSALDO
Ansaldo Trasporti s.p.a.
Unita' Semiconduttori
相關PDF資料 |
PDF描述 |
|---|---|
| AT866S36 | PHASE CONTROL THYRISTOR |
| AT875 | PHASE CONTROL THYRISTOR |
| AT875LT | PHASE CONTROL THYRISTOR |
| AT875LTS44 | PHASE CONTROL THYRISTOR |
| AT875S44 | PHASE CONTROL THYRISTOR |
相關代理商/技術參數 |
參數描述 |
|---|---|
| AT866S36 | 制造商:POSEICO 制造商全稱:POSEICO 功能描述:PHASE CONTROL THYRISTOR |
| AT86RF210 | 制造商:ATMEL 制造商全稱:ATMEL Corporation 功能描述:Z-Link Transceiver |
| AT86RF211 | 制造商:ATMEL 制造商全稱:ATMEL Corporation 功能描述:FSK Transceiver for ISM Radio Applications |
| AT86RF211DAI | 功能描述:IC RF TXRX FSK 400-950MHZ 48TQFP RoHS:否 類別:RF/IF 和 RFID >> RF 收發器 系列:- 產品培訓模塊:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 標準包裝:30 系列:- 頻率:4.9GHz ~ 5.9GHz 數據傳輸率 - 最大:54Mbps 調制或協議:* 應用:* 功率 - 輸出:-3dBm 靈敏度:- 電源電壓:2.7 V ~ 3.6 V 電流 - 接收:* 電流 - 傳輸:* 數據接口:PCB，表面貼裝 存儲容量:- 天線連接器:PCB，表面貼裝 工作溫度:-25°C ~ 85°C 封裝/外殼:68-TQFN 裸露焊盤 包裝:管件 |
| AT86RF211DAI-R | 功能描述:IC TXRX FR FSK 400-950MHZ 48-TQF RoHS:否 類別:RF/IF 和 RFID >> RF 收發器 系列:- 產品培訓模塊:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 標準包裝:30 系列:- 頻率:4.9GHz ~ 5.9GHz 數據傳輸率 - 最大:54Mbps 調制或協議:* 應用:* 功率 - 輸出:-3dBm 靈敏度:- 電源電壓:2.7 V ~ 3.6 V 電流 - 接收:* 電流 - 傳輸:* 數據接口:PCB，表面貼裝 存儲容量:- 天線連接器:PCB，表面貼裝 工作溫度:-25°C ~ 85°C 封裝/外殼:68-TQFN 裸露焊盤 包裝:管件 |
發布緊急采購，3分鐘左右您將得到回復。