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參數(shù)資料
| 型號： | ATF-33143-TR2 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | L BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封裝： | PLASTIC, SC-70, 4 PIN |
| 文件頁數(shù)： | 1/15頁 |
| 文件大小： | 86K |
| 代理商： | ATF-33143-TR2 |
Low Noise Pseudomorphic HEMT
in a Surface Mount Plastic Package
Technical Data
ATF-33143
Features
Low Noise Figure
Excellent Uniformity in
Product Specifications
Low Cost Surface Mount
Small Plastic Package
SOT-343 (4 lead SC-70)
Tape-and-Reel Packaging
Option Available
Specifications
1.9 GHz; 4 V, 80 mA (Typ.)
0.5 dB Noise Figure
15 dB Associated Gain
22 dBm Output Power at
1 dB Gain Compression
33.5 dBm Output 3rd Order
Intercept
Applications
Low Noise Amplifier and
Driver Amplifier for
Cellular/PCS Base Stations
LNA for WLAN, WLL/RLL,
LEO, and MMDS
Applications
General Purpose Discrete
PHEMT for Other Ultra Low
Noise Applications
Surface Mount Package
SOT-343
Description
Hewlett Packard’s ATF-33143 is a
high dynamic range, low noise,
PHEMT housed in a 4-lead SC-70
(SOT-343) surface mount plastic
package.
Based on its featured perfor-
mance, ATF-33143 is suitable for
applications in cellular and PCS
base stations, LEO systems,
MMDS, and other systems requir-
ing super low noise figure with
good intercept in the 450 MHz to
10 GHz frequency range.
Other PHEMT devices in this
family are the ATF-34143 and the
ATF-35143. The typical specifica-
tions for these devices at 2 GHz
are shown in the table below:
Pin Connections and
Package Marking
Part No.
Gate Width
Bias Point
NF (dB) Ga (dB) OIP3 (dBm)
ATF-33143
1600
4 V, 80 mA
0.5
15.0
33.5
ATF-34143
800
4 V, 60 mA
0.5
17.5
31.5
ATF-35143
400
4V, 30 mA
0.4
18.0
28.0
GATE
3Px
SOURCE
DRAIN
SOURCE
Note:
Top View. Package marking
provides orientation and identification.
“3P” = Device code
“x” = Date code character. A new
character is assigned for each month, year.
相關PDF資料 |
PDF描述 |
|---|---|
| ATF-33143-TR1 | L BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-33143-TR2G | X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-33143-BLKG | X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-33143-TR1G | X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-331M4-BLK | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
相關代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ATF-33143-TR2G | 功能描述:射頻GaAs晶體管 Transistor GaAs Low Noise RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體: |
| ATF331M4 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Agilent ATF-331M4 Low Noise Pseudomorphic HEMT in a Miniature Leadless Package |
| ATF-331M4 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:PHEMT Low Noise +31 dBm OIP3 in MiniPak |
| ATF-331M4-BLK | 功能描述:射頻GaAs晶體管 Transistor GaAs Low Noise RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體: |
| ATF-331M4-TR1 | 功能描述:射頻GaAs晶體管 Transistor GaAs Low Noise RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體: |
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