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參數資料
| 型號： | ATF-33143-TR2G |
| 元件分類： | 小信號晶體管 |
| 英文描述： | X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封裝： | LEAD FREE, PLASTIC, SC-70, 4 PIN |
| 文件頁數： | 1/18頁 |
| 文件大?。?/td> | 521K |
| 代理商： | ATF-33143-TR2G |
ATF-33143
Low Noise Pseudomorphic HEMT
in a Surface Mount Plastic Package
Data Sheet
Features
Lead-free Option Available
Low Noise Figure
Excellent Uniformity in Product Specifications
1600 micron Gate Width
Low Cost Surface Mount Small Plastic Package
SOT-343 (4 lead SC-70)
Tape-and-Reel Packaging Option Available
Specifications
1.9 GHz; 4V, 80 mA (Typ.)
0.5 dB Noise Figure
15 dB Associated Gain
22 dBm Output Power at 1 dB Gain Compression
33.5 dBm Output 3rd Order Intercept
Applications
Tower Mounted Amplifier, Low Noise Amplifier and
Driver Amplifier for GSM/TDMA/CDMA Base Stations
LNA for Wireless LAN, WLL/RLL and MMDS
Applications
General Purpose Discrete PHEMT for other Ultra Low
Noise Applications
Description
Avago’s ATF-33143 is a high dynamic range, low noise
PHEMT housed in a 4-lead SC-70 (SOT-343) surface mount
plastic package.
Based on its featured performance, ATF-33143 is ideal for
the first or second stage of base station LNA due to the
excellent combination of low noise figure and enhanced
linearity[1]. The device is also suitable for applications in
Wireless LAN, WLL/RLL, MMDS, and other systems requiring
super low noise figure with good intercept in the 450 MHz
to 10 GHz frequency range.
Note:
1. From the same PHEMT FET family, the smaller geometry ATF-
34143 may also be considered for the higher gain performance,
particularly in the higher frequency band (1.8 GHz and up).
Surface Mount Package SOT-343
Pin Connections and Package Marking
Note:
Top View. Package marking provides
orientation and identification.
“3P” = Device code
“x” = Date code character. A new character
is assigned for each month, year.
SOURCE
DRAIN
GATE
SOURCE
3Px
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model (Class A)
ESD Human Body Model (Class 0)
Refer to Avago Application Note A004R:
Electrostatic Discharge Damage and Control.
相關PDF資料 |
PDF描述 |
|---|---|
| ATF-33143-BLKG | X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-33143-TR1G | X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-331M4-BLK | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-331M4-TR1 | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-331M4-TR2 | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| ATF331M4 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Agilent ATF-331M4 Low Noise Pseudomorphic HEMT in a Miniature Leadless Package |
| ATF-331M4 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:PHEMT Low Noise +31 dBm OIP3 in MiniPak |
| ATF-331M4-BLK | 功能描述:射頻GaAs晶體管 Transistor GaAs Low Noise RoHS:否 制造商:TriQuint Semiconductor 技術類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數: 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體: |
| ATF-331M4-TR1 | 功能描述:射頻GaAs晶體管 Transistor GaAs Low Noise RoHS:否 制造商:TriQuint Semiconductor 技術類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數: 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體: |
| ATF-331M4-TR2 | 功能描述:射頻GaAs晶體管 Transistor GaAs Low Noise RoHS:否 制造商:TriQuint Semiconductor 技術類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數: 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體: |
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