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參數(shù)資料
| 型號： | ATF-331M4-TR2 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封裝： | 1.40 X 1.20 MM, 0.70 MM HEIGHT, MINIPAK-4 |
| 文件頁數(shù)： | 1/14頁 |
| 文件大小： | 131K |
| 代理商： | ATF-331M4-TR2 |
ATF-331M4
Low Noise Pseudomorphic HEMT in a
Miniature Leadless Package
Data Sheet
Description
Avago Technologies’s ATF-331M4 is a high linearity, low
noise pHEMT housed in a miniature leadless package.
The ATF-331M4’s small size and low profile makes it
ideal for the design of hybrid modules and other
space-constraint devices.
Based on its featured performance, ATF-331M4 is
ideal for the first or second stage of base station LNA
due to the excellent combination of low noise figure
and enhanced linearity [1]. The device is also suitable
for applications in Wireless LAN, WLL/RLL, MMDS,
and other systems requiring super low noise figure
with good intercept in the 450 MHz to 10 GHz
frequency range.
Note:
1. From the same PHEMT FET family, the smaller geometry ATF-34143 may
also be considered for the higher gain performance, particularly in the
higher frequency band (1.8 GHz and up).
Features
Low noise figure
Excellent uniformity in product specifications
1600 micron gate width
Miniature leadless package 1.4 mm x 1.2 mm x 0.7 mm
Tape-and-reel packaging option available
Specifications
2 GHz; 4 V, 60 mA (Typ.)
0.6 dB noise figure
15 dB associated gain
19 dBm output power at 1 dB gain compression
31 dBm output 3rd order intercept
Applications
Tower mounted amplifier, low noise amplifier and driver
amplifier for GSM/TDMA/CDMA base stations
LNA for WLAN, WLL/RLL, MMDS and wireless data
infrastructures
General purpose discrete PHEMT for other ultra low noise
applications
MiniPak 1.4 mm x 1.2 mm Package
Pin Connections and Package Marking
Note:
Top View. Package marking provides orientation, product identification and
date code.
“P” = Device Type Code
“x” = Date code character. A different character is assigned for each
month and year.
Px
Source
Pin 3
Gate
Pin 2
Source
Pin 1
Drain
Pin 4
Px
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ATF-331M4-TR1 | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-331M4-BLK | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-331M4-TR2 | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-331M4-TR2G | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-331M4-TR1G | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ATF34143 | 制造商:HP 制造商全稱:Agilent(Hewlett-Packard) 功能描述:Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-34143 | 制造商:Avago Technologies 功能描述:MOSFET RF SOT-343 |
| ATF34143BLK | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 5.5V V(BR)DSS | 90MA I(DSS) | SOT-343R |
| ATF-34143-BLK | 制造商:Agilent Technologies 功能描述:JFET Transistor, N-Channel, SOT-343R |
| ATF-34143-BLKG | 功能描述:射頻GaAs晶體管 Transistor GaAs Low Noise RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
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