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參數資料
| 型號： | ATF-33143-TR2 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封裝： | PLASTIC, SC-70, 4 PIN |
| 文件頁數： | 1/18頁 |
| 文件大小： | 154K |
| 代理商： | ATF-33143-TR2 |
ATF-33143
Low Noise Pseudomorphic HEMT
in a Surface Mount Plastic Package
Data Sheet
Features
Lead-free Option Available
Low Noise Figure
Excellent Uniformity in Product
Specifications
1600 micron Gate Width
Low Cost Surface Mount Small
Plastic Package SOT-343 (4 lead
SC-70)
Tape-and-Reel Packaging Option
Available
Specifications
1.9 GHz; 4V, 80 mA (Typ.)
0.5 dB Noise Figure
15 dB Associated Gain
22 dBm Output Power at 1 dB
Gain Compression
33.5 dBm Output 3rd Order
Intercept
Applications
Tower Mounted Amplifier, Low
Noise Amplifier and Driver
Amplifier for GSM/TDMA/CDMA
Base Stations
LNA for Wireless LAN, WLL/RLL
and MMDS Applications
General Purpose Discrete PHEMT
for other Ultra Low Noise
Applications
Surface Mount Package
SOT-343
Description
Avago’s ATF-33143 is a high
dynamic range, low noise PHEMT
housed in a 4-lead SC-70 (SOT-343)
surface mount plastic package.
Based on its featured performance,
ATF-33143 is ideal for the first or
second stage of base station LNA
due to the excellent combination
of low noise figure and enhanced
linearity[1]. The device is also
suitable for applications in Wire-
less LAN, WLL/RLL, MMDS, and
other systems requiring super low
noise figure with good intercept in
the 450 MHz to 10 GHz frequency
range.
Note:
1. From the same PHEMT FET family, the
smaller geometry ATF-34143 may also be
considered for the higher gain performance,
particularly in the higher frequency band (1.8
GHz and up).
Pin Connections and
Package Marking
GATE
3Px
SOURCE
DRAIN
SOURCE
Note:
Top View. Package marking
provides orientation and identification.
“3P” = Device code
“x” = Date code character. A new
character is assigned for each month, year.
Attention:
Observe precautions for
handling electrostatic
sensitive devices.
ESD Machine Model (Class A)
ESD Human Body Model (Class 1)
Refer to Avago Application Note A004R:
Electrostatic Discharge Damage and Control.
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| ATF-33143-TR1 | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| ATF-33143-TR2G | 功能描述:射頻GaAs晶體管 Transistor GaAs Low Noise RoHS:否 制造商:TriQuint Semiconductor 技術類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數: 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體: |
| ATF331M4 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Agilent ATF-331M4 Low Noise Pseudomorphic HEMT in a Miniature Leadless Package |
| ATF-331M4 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:PHEMT Low Noise +31 dBm OIP3 in MiniPak |
| ATF-331M4-BLK | 功能描述:射頻GaAs晶體管 Transistor GaAs Low Noise RoHS:否 制造商:TriQuint Semiconductor 技術類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數: 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體: |
| ATF-331M4-TR1 | 功能描述:射頻GaAs晶體管 Transistor GaAs Low Noise RoHS:否 制造商:TriQuint Semiconductor 技術類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數: 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體: |
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