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參數資料
| 型號： | ATF-34143-TR2G |
| 元件分類： | 小信號晶體管 |
| 英文描述： | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封裝： | LEAD FREE, PLASTIC, SC-70, 4 PIN |
| 文件頁數： | 1/15頁 |
| 文件大小： | 258K |
| 代理商： | ATF-34143-TR2G |
ATF-34143
Low Noise Pseudomorphic HEMT
in a Surface Mount Plastic Package
Data Sheet
Features
Lead-free Option Available
Low Noise Figure
Excellent Uniformity in Product Specifications
800 micron Gate Width
Low Cost Surface Mount Small Plastic Package
SOT-343 (4 lead SC-70)
Tape-and-Reel Packaging Option Available
Specifications
1.9 GHz; 4V, 60 mA (Typ.)
0.5 dB Noise Figure
17.5 dB Associated Gain
20 dBm Output Power at 1 dB Gain Compression
31.5 dBm Output 3rd Order Intercept
Applications
Tower Mounted Amplifier and Low Noise Amplifier
for GSM/TDMA/CDMA Base Stations
LNA for Wireless LAN, WLL/RLL and MMDS
Applications
General Purpose Discrete PHEMT for other Ultra Low
Noise Applications
Surface Mount Package - SOT-343
Description
Avago’s ATF-34143 is a high dynamic range, low noise
PHEMT housed in a 4-lead SC-70 (SOT-343) surface mount
plastic package.
Based on its featured performance, ATF-34143 is ideal for
the first stage of base station LNA due to the excellent
combination of low noise figure and high linearity[1]. The
device is also suitable for applications in Wireless LAN,
WLL/RLL, MMDS, and other systems requiring super low
noise figure with good intercept in the 450 MHz to 10 GHz
frequency range.
Note:
1. From the same PHEMT FET family, the larger geometry ATF-33143
may also be considered either for the higher linearity performance
or easier circuit design for stability in the lower frequency bands
(800– 900 MHz).
Pin Connections and Package Marking
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model (Class A)
ESD Human Body Model (Class 0)
Refer to Avago Application Note A004R:
Electrostatic Discharge Damage and Control.
GATE
4P
x
SOURCE
DRAIN
SOURCE
Note: Top View. Package marking provides
orientation and identification.
“4P” = Device code
“x” = Date code character. A new character
is assigned for each month, year.
GATE
4P
x
SOURCE
DRAIN
SOURCE
相關PDF資料 |
PDF描述 |
|---|---|
| ATF-34143-TR1G | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-34143-BLKG | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-34143-TR2 | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-34143-BLK | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-34143-TR1 | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| ATF35076 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:2-18 GHz Low Noise Pseudomorphic HEMT |
| ATF35143 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-35143 | 制造商:Avago Technologies 功能描述:MOSFET RF SOT-343 |
| ATF-35143-BLK | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-35143-BLKG | 功能描述:射頻GaAs晶體管 Transistor GaAs Low Noise RoHS:否 制造商:TriQuint Semiconductor 技術類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數: 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體: |
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