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參數(shù)資料
| 型號(hào)： | ATF-36163-BLK |
| 廠商： | AGILENT TECHNOLOGIES INC |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封裝： | PLASTIC, SC-70, 6 PIN |
| 文件頁(yè)數(shù)： | 1/11頁(yè) |
| 文件大小： | 112K |
| 代理商： | ATF-36163-BLK |
1.5 – 18 GHz Surface Mount
Pseudomorphic HEMT
Technical Data
ATF-36163
Features
Lead-free Option Available
Low Minimum Noise Figure:
1 dB Typical at 12 GHz
0.6 dB Typical at 4 GHz
Associated Gain:
9.4 dB Typical at 12 GHz
15.8 dB Typical at 4 GHz
Maximum Available Gain:
11 dB Typical at 12 GHz
17 dB Typical at 4 GHz
Low Cost Surface Mount
Small Plastic Package
Tape-and-Reel Packaging
Option Available
Applications
12 GHz DBS Downconverters
4 GHz TVRO Downconverters
S or L Band Low Noise
Amplifiers
Surface Mount Package
SOT-363 (SC-70)
Additionally, the ATF-36163 has
low noise-resistance, which
reduces the sensitivity of noise
performance to variations in
input impedance match. This
feature makes the design of broad
band low noise amplifiers much
easier. The performance of the
ATF-36163 makes this device the
ideal choice for use in the 2nd or
3rd stage of low noise cascades.
The repeatable performance and
consistency make it appropriate
for use in Ku-band Direct
Broadcast Satellite (DBS) TV
systems, C-band TV Receive Only
(TVRO) LNAs, Multichannel
Multipoint Distribution Systems
(MMDS), X-band Radar detector
and other low noise amplifiers
operating in the 1.5 – 18 GHz
frequency range.
This GaAs PHEMT device has a
nominal 0.2 micron gate length
with a total gate periphery
(width) of 200 microns. Proven
gold-based metallization system
and nitride passivation assure
rugged, reliable devices.
Description
The Agilent ATF-36163 is a low-
noise Pseudomorphic High
Electron Mobility Transistor
(PHEMT), in the SOT-363 (SC-70)
package. When optimally matched
for minimum noise figure, it will
provide a noise figure of 1 dB at
12 GHz and 0.6 dB at 4 GHz.
Pin Connections and
Package Marking
DRAIN
SOURCE
36
SOURCE
GATE
SOURCE
Note:
Package marking provides
orientation and identification.
Attention:
Observe precautions for
handling electrostatic
sensitive devices.
ESD Machine Model (Class A)
Refer to Agilent Application Note A004R:
Electrostatic Discharge Damage and Control.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ATF-36163-TR1 | KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-36163-TR2 | KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-36163-BLK | KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-38143-TR1 | X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-38143-TR1G | X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ATF-36163-BLKG | 功能描述:射頻GaAs晶體管 Transistor GaAs High Frequency RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| ATF-36163-BLKG | 制造商:Avago Technologies 功能描述:RF Bipolar Transistor |
| ATF-36163-G | 制造商:Avago Technologies 功能描述:Transistor,RF,PHEMT,9,5dB GA,ATF-36163 |
| ATF-36163-TR1 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:1.5-18 GHz Surface Mount Pseudomorphic HEMT |
| ATF-36163-TR1G | 功能描述:射頻GaAs晶體管 Transistor GaAs High Frequency RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
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