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參數資料
| 型號： | ATF-50189-BLK |
| 元件分類： | 小信號晶體管 |
| 英文描述： | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
| 封裝： | LEAD FREE PACKAGE-3 |
| 文件頁數： | 1/21頁 |
| 文件大小： | 350K |
| 代理商： | ATF-50189-BLK |
ATF-50189
Enhancement Mode
[1] Pseudomorphic HEMT in
SOT 89 Package
Data Sheet
Features
High Linearity and P1dB
Low Noise Figure
Excellent uniformity in product specifications
SOT 89 standard package
Point MTTF > 300 years[2]
MSL-1 and lead-free
Tape-and-Reel packaging option available
Specifications
2 GH, 4.5V, 280 mA (Typ.)
45 dBm Output IP3
29 dBm Output Power at 1dB gain compression
1.1 dB Noise Figure
15.5 dB Gain
62% PAE at P1dB
LFOM[4] 14 dB
Applications
Front-end LNA Q2 and Q3, Driver or Pre-driver Amplifier
for Cellular/PCS and WCDMA wireless infrastructure
Driver Amplifier for WLAN, WLL/RLL and MMDS
applications
General purpose discrete E-pHEMT for other high linearity
applications
Pin Connections and Package Marking
Notes:
Package marking provides orientation and
identification:
“0G” = Device Code
“x” = Month code indicates the month of
manufacture.
D = Drain
S = Source
G = Gate
Notes:
1. Enhancement mode technology employs a single positive V
gs,
eliminating the need of negative gate voltage associated with
conventional depletion mode devices.
2. Refer to reliability datasheet for detailed MTTF data
3. Conform to JEDEC reference outline MO229 for DRP-N
4. Linearity Figure of Merit (LFOM) is OIP3 divided by DC bias power.
Description
Avago Technologies’s ATF-50189 is a high linearity,
medium power, low noise E-pHEMT FET packaged in
a low cost surface mount SOT89[3] package. The com-
bination of low noise figure and high output IP3 at
the same bias point makes it ideal for receiver and
transmitter application. Its operating frequency range
is from 400 MHz to 3.9 GHz.
The ATF-50189 is ideally suited for Cellular/PCS and
WCDMA wireless infrastructure, WLAN, WLL and
MMDS application, and general purpose discrete
E-pHEMT amplifiers which require high linearity and
power. All devices are 100% RF and DC tested.
OGX
Bottom View
DS
G
Top View
GS
D
Attention:
Observe precautions for handling electrostatic
sensitive devices.
ESD Machine Model (Class A)
ESD Human Body Model (Class 1C)
Refer to Avago Application Note A004R: Electrostatic Discharge
Damage and Control.
相關PDF資料 |
PDF描述 |
|---|---|
| ATF-50189-TR1 | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
| ATF-50189-TR1 | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-50189-BLK | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-50189-BLKG | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-50189-TR1G | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| ATF-50189-TR1 | 功能描述:射頻GaAs晶體管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技術類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數: 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體: |
| ATF-50189-TR2 | 功能描述:射頻GaAs晶體管 Transistor GaAs Hi gh Linearity RoHS:否 制造商:TriQuint Semiconductor 技術類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數: 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體: |
| ATF501P8 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Agilent ATF-501P8 High Linearity Enhancement Mode Pseudomorphic HEMT in 2x2 mm2 LPCC Package |
| ATF-501P8 | 制造商:Avago Technologies 功能描述:MOSFET RF POWERPAK |
| ATF-501P8-BLK | 功能描述:射頻GaAs晶體管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技術類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數: 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體: |
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