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參數(shù)資料
| 型號： | ATF-52189-TR1 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封裝： | LEAD FREE PACKAGE-3 |
| 文件頁數(shù)： | 1/18頁 |
| 文件大小： | 2247K |
| 代理商： | ATF-52189-TR1 |
ATF-52189
High Linearity Mode
[1] Enhancement
Pseudomorphic HEMT in SOT 89 Package
Data Sheet
Features
Single voltage operation
High Linearity and P1dB
Low Noise Figure
Excellent uniformity in product specifications
SOT 89 standard package
Point MTTF > 300 years[2]
MSL-1 and lead-free
Tape-and-Reel packaging option available
Specifications
2 GHz, 4.5V, 200 mA (Typ.)
42 dBm Output IP3
27 dBm Output Power at 1dB gain compression
1.50 dB Noise Figure
16.0 dB Gain
55% PAE at P1dB
LFOM[3] 12.5 dB
Applications
Front-end LNA Q2 and Q3, Driver or Pre-driver Amplifier for
Cellular/PCS and WCDMA wireless infrastructure
Driver Amplifier for WLAN, WLL/RLL and MMDS applications
General purpose discrete E-pHEMT for other high linearity
applications
Notes:
1. Enhancement mode technology employs a single positive Vgs, eliminating
the need of negative gate voltage associated with conventional depletion
mode devices.
2. Refer to reliability datasheet for detailed MTTF data.
3. Linearity Figure of Merit (LFOM) is OIP3 divided by DC bias power.
Description
Avago Technologies’s ATF-52189 is a single-voltage
high linearity, low noise E-pHEMT FET packaged in a
low cost surface mount SOT89 package. The device is
ideal as a medium-power, high-linearity amplifier. Its
operating frequency range is from 50 MHz to 6 GHz.
ATF-52189 is ideally suited for Cellular/PCS and
WCDMA wireless infrastructure, WLAN, WLL and
MMDS application, and general purpose discrete
E-pHEMT amplifiers which require medium power and
high linearity. All devices are 100% RF and DC tested.
Pin Connections and Package Marking
Notes:
Package marking provides orientation and identification:
“2G” = Device Code
“x” = Month code indicates the month of manufacture.
D = Drain
S = Source
G = Gate
2GX
Bottom View
DS
S
G
Top View
GS
S
D
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ATF-521P8-TR1 | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
| ATF-521P8-TR2 | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
| ATF-521P8-BLK | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
| ATF-521P8-TR2G | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
| ATF-521P8-TR1G | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ATF-52189-TR2 | 功能描述:射頻GaAs晶體管 Transistor GaAs Hi gh Linearity RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| ATF-521P8 | 制造商:AVAGO 制造商全稱:AVAGO TECHNOLOGIES LIMITED 功能描述:High Linearity Enhancement Mode[1] Pseudomorphic 2x2 mm2 LPCC[3] Package |
| ATF-521P8-BLK | 功能描述:射頻GaAs晶體管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| ATF-521P8-BLK | 制造商:Avago Technologies 功能描述:RF Bipolar Transistor |
| ATF-521P8-BLKG | 制造商:Avago Technologies 功能描述: |
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