- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄42904 > ATF-55143-TR1 C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET PDF資料下載
參數(shù)資料
| 型號： | ATF-55143-TR1 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封裝： | PLASTIC, SC-70, 4 PIN |
| 文件頁數(shù)： | 1/21頁 |
| 文件大?。?/td> | 254K |
| 代理商： | ATF-55143-TR1 |
ATF-55143
Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface
Mount Plastic Package
Data Sheet
Description
Avago Technologies’ ATF55143 is a high dynamic range,
very low noise, single supply EPHEMT housed in a
4lead SC70 (SOT343) surface mount plastic package.
The combination of high gain, high linearity and low
noise makes the ATF55143 ideal for cellular/PCS hand
sets, wireless data systems (WLL/RLL, WLAN and MMDS)
and other systems in the 450 MHz to 6 GHz frequency
range.
Features
High linearity performance
Single Supply Enhancement Mode Technology[1]
Very low noise figure
Excellent uniformity in product specifications
400 micron gate width
Low cost surface mount small plastic package SOT
343 (4 lead SC70)
TapeandReel packaging option available
Lead Free Option Available
Specifications
2 GHz; 2.7V, 10 mA (Typ.)
24.2 dBm output 3rd order intercept
14.4 dBm output power at 1 dB gain compression
0.6 dB noise figure
17.7 dB associated gain
Leadfree option available
Applications
Low noise amplifier for cellular/PCS handsets
LNA for WLAN, WLL/RLL and MMDS applications
General purpose discrete EPHEMT for other ultra low
noise applications
Note:
1. Enhancement mode technology requires positive Vgs, thereby
eliminating the need for the negative gate voltage associated with
conventional depletion mode devices.
Surface Mount Package SOT-343
Pin Connections and Package Marking
SOURCE
DRAIN
GATE
SOURCE
5Fx
Note:
Top View. Package marking provides orientation and identification
“5F” = Device Code
“x” = Date code character identifies month of manufacture.
Attention:
Observe precautions for handling electrostatic sensitive devices.
ESD Machine Model (Class A)
ESD Human Body Model (Class 0)
Refer to Agilent Application Note A004R: Electrostatic Discharge Damage and Control.
相關PDF資料 |
PDF描述 |
|---|---|
| ATF-551M4-TR2G | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-551M4-BLK | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-551M4-BLKG | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-551M4-TR1 | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-551M4-TR2 | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| ATF-55143-TR1G | 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體: |
| ATF-55143-TR2 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Agilent ATF-55143 Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-55143-TR2G | 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體: |
| ATF-551M4 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Noise Enhancement Mode Pseudomorphic HEMT in a Miniature Leadless Package |
| ATF-551M4-BLK | 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體: |
發(fā)布緊急采購，3分鐘左右您將得到回復。