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參數(shù)資料
| 型號(hào)： | ATF-551M4-TR2 |
| 廠商： | AGILENT TECHNOLOGIES INC |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封裝： | 1.40 MM X 1.20 MM, 0.70 MM HEIGHT, MINIATURE, LEADLESS PACKAGE-4 |
| 文件頁數(shù)： | 1/23頁 |
| 文件大小： | 183K |
| 代理商： | ATF-551M4-TR2 |
Agilent ATF-551M4
Low Noise Enhancement Mode
Pseudomorphic HEMT in a
Miniature Leadless Package
Data Sheet
Description
Agilent Technologies’ ATF-551M4
is a high dynamic range, super
low noise, single supply
E-pHEMT GAAs FET housed in a
thin miniature leadless package.
The combination of small device
size, super low noise (under 1 dB
Fmin from 2 to 6 GHz), high
linearity and low power makes
the ATF-551M4 ideal for LNA or
hybrid module designs in wire-
less receiver in the 450 MHz to
10 GHz frequency band.
Applications include Cellular/
PCS/ WCDMA handsets and data
modem cards, fixed wireless
infrastructure in the 2.4, 3.5 GHz
and UNII frequency bands, as
well as 2.4 GHz 802.11b, 5 GHz
802.11a and HIPERLAN/2
Wireless LAN PC-cards.
Note:
1. Agilent’s enhancement mode E-pHEMT
devices are the first commercially available
single-supply GaAs transistors that do not
need a negative gate bias voltage for
operation. They can help simplify the design
and reduce the cost of receivers and
transmitters in many applications in the
450 MHz to 10 GHz frequency range.
Features
Very low noise figure and high
linearity
Single Supply Enhancement Mode
Technology[1] optimized for 3V
operation
Excellent uniformity in product
specifications
400 micron gate width
Thin miniature package
1.4 mm x 1.2 mm x 0.7 mm
Tape-and-reel packaging option
available
Specifications
2 GHz; 2.7V, 10 mA (typ.)
24.1 dBm output 3rd order intercept
14.6 dBm output power at 1 dB gain
compression
0.5 dB noise figure
17.5 dB associated gain
Applications
Low Noise Amplifier for:
– Cellular/PCS/WCDMA hand-
sets and modem cards
– 2.4 GHz, 3.5 GHz and UNII fixed
wireless infrastructure
– 2.4 GHz 802.11b Wireless LAN
– 5 GHz 802.11a and HIPERLAN
Wireless LAN
General purpose discrete E-pHEMT
for other ultra low noise applications
MiniPak 1.4 mm x 1.2 mm Package
Pin Connections and
Package Marking
Note:
Top View. Package marking provides orientation,
product identification and date code.
“V” = Device Type Code
“x” = Date code character. A different
character is assigned for each month and
year.
Source
Pin 3
Gate
Pin 2
Source
Pin 1
Drain
Pin 4
Vx
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ATF-551M4-TR1G | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-551M4-TR2 | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-551M4-TR1 | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-551M4-BLK | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| AUIRF1010EZL | 75 A, 60 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ATF-58143 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-58143-BLK | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-58143-BLKG | 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| ATF-58143-BLKG | 制造商:Avago Technologies 功能描述:RF Bipolar Transistor |
| ATF-58143-TR1 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package |
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