- 您現在的位置：買賣IC網 > PDF目錄57962 > ATP112 25 A, 60 V, 0.043 ohm, P-CHANNEL, Si, POWER, MOSFET PDF資料下載
參數資料
| 型號： | ATP112 |
| 元件分類： | JFETs |
| 英文描述： | 25 A, 60 V, 0.043 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | HALOGEN FREE, ATPAK-3 |
| 文件頁數： | 1/4頁 |
| 文件大?。?/td> | 345K |
| 代理商： | ATP112 |
ATP112
No. A1754-1/4
Features
ON-resistance RDS(on)1=33mΩ(typ.)
Input Capacitance Ciss=1450pF(typ.)
4V drive
Halogen free compliance
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
--60
V
Gate-to-Source Voltage
VGSS
±20
V
Drain Current (DC)
ID
--25
A
Drain Current (PW≤10μs)
IDP
PW≤10μs, duty cycle≤1%
--75
A
Allowable Power Dissipation
PD
Tc=25°C40
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Avalanche Energy (Single Pulse) *1
EAS
50
mJ
Avalanche Current *2
IAV
--13
A
Note :
*1 VDD=--10V, L=500μH, IAV=--13A
*2 L≤500μH, Single pulse
Package Dimensions
unit : mm (typ)
7057-001
Ordering number : ENA1754
72110PA TK IM TC-00002329
SANYO Semiconductors
DATA SHEET
ATP112
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
http://semicon.sanyo.com/en/network
Product & Package Information
Package
: ATPAK
JEITA, JEDEC
: -
Minimum Packing Quantity : 3,000 pcs./reel
Packing Type: TL
Marking
Electrical Connection
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : ATPAK
0.7
0.4
0.55
9.5
7.3
0.5
1.7
4.6
6.05
13
2
6.5
0.6
4
0.8
0.5
1.5
0.4
2.6
4.6
0.4
0.1
2.3
TL
ATP112
LOT No.
1
3
2,4
相關PDF資料 |
PDF描述 |
|---|---|
| ATP112TL | 25 A, 60 V, 0.043 ohm, P-CHANNEL, Si, POWER, MOSFET |
| ATP113 | 35 A, 60 V, 0.0295 ohm, P-CHANNEL, Si, POWER, MOSFET |
| ATP113TL | 35 A, 60 V, 0.0295 ohm, P-CHANNEL, Si, POWER, MOSFET |
| ATP212 | 35 A, 60 V, 0.023 ohm, N-CHANNEL, Si, POWER, MOSFET |
| ATP212 | 35 A, 60 V, 0.023 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| ATP112_12 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
| ATP112-TL-H | 功能描述:MOSFET SWITCHING DEVICE RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| ATP113 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:P-Channel Silicon MOSFET General-Purpose Switching Device Applications |
| ATP113_12 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
| ATP113-TL-H | 功能描述:MOSFET SWITCHING DEVICE RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發布緊急采購，3分鐘左右您將得到回復。