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參數資料
| 型號： | ATP202 |
| 元件分類： | JFETs |
| 英文描述： | 50 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | HALOGEN FREE, ATPAK, 3 PIN |
| 文件頁數： | 2/4頁 |
| 文件大小： | 256K |
| 代理商： | ATP202 |
ATP202
No. A1317-2/4
Continued from preceding page.
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Cutoff Voltage
VGS(off)
VDS=10V, ID=1mA
1.2
2.6
V
Forward Transfer Admittance
| yfs |
VDS=10V, ID=25A
10
17
S
Static Drain-to-Source On-State Resistance
RDS(on)1
ID=25A, VGS=10V
912
mΩ
RDS(on)2
ID=13A, VGS=4.5V
14
20
mΩ
Input Capacitance
Ciss
VDS=10V, f=1MHz
1650
pF
Output Capacitance
Coss
VDS=10V, f=1MHz
285
pF
Reverse Transfer Capacitance
Crss
VDS=10V, f=1MHz
160
pF
Turn-ON Delay Time
td(on)
See specied Test Circuit.
16
ns
Rise Time
tr
See specied Test Circuit.
185
ns
Turn-OFF Delay Time
td(off)
See specied Test Circuit.
93
ns
Fall Time
tf
See specied Test Circuit.
93
ns
Total Gate Charge
Qg
VDS=15V, VGS=10V, ID=50A
27
nC
Gate-to-Source Charge
Qgs
VDS=15V, VGS=10V, ID=50A
7.5
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=15V, VGS=10V, ID=50A
4
nC
Diode Forward Voltage
VSD
IS=50A, VGS=0V
0.97
1.2
V
Package Dimensions
unit : mm (typ)
7057-001
Switching Time Test Circuit
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : ATPAK
0.7
0.4
0.55
9.5
7.3
0.5
1.7
4.6
6.05
13
2
6.5
0.6
4
0.8
0.5
1.5
0.4
2.6
4.6
0.4
0.1
2.3
PW=10μs
D.C.≤1%
P.G
50Ω
G
S
D
ID=25A
RL=0.6Ω
VDD=15V
VOUT
ATP202
VIN
10V
0V
VIN
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相關代理商/技術參數 |
參數描述 |
|---|---|
| ATP202_12 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
| ATP202-TL-H | 功能描述:MOSFET SWITCHING DEVICE RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| ATP203 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:N-Channel Silicon MOSFET General-Purpose Switching Device Applications |
| ATP203_12 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
| ATP203-TL-H | 功能描述:MOSFET SWITCHING DEVICE RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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