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參數(shù)資料
型號: AUIRF1404STRR
元件分類: JFETs
英文描述: 75 A, 40 V, 0.004 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
封裝: ROHS COMPLIANT, PLASTIC, D2PAK-3
文件頁數(shù): 1/13頁
文件大?。?/td> 228K
代理商: AUIRF1404STRR
AUIRF1404S
AUIRF1404L
HEXFET Power MOSFET
06/07/11
www.irf.com
1
PD -97680
Features
Advanced Planar Technology
Dynamic dV/dT Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
AUTOMOTIVE GRADE
S
D
G
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings
only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure
to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings
are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
GD
S
Gate
Drain
Source
D2Pak
AUIRF1404S
TO-262
AUIRF1404L
G
D
S
GD
S
HEXFET is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
Symbol
Parameter
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
i
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
i
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Package Limited)
IDM
Pulsed Drain Current
i
PD @TA = 25°C
Maximum Power Dissipation
W
PD @TC = 25°C
Maximum Power Dissipation
Linear Derating Factor
W/°C
VGS
Gate-to-Source Voltage
V
EAS
Single Pulse Avalanche Energy (Thermally Limited)
di
mJ
IAR
Avalanche Current
A
EAR
Repetitive Avalanche Energy
mJ
dv/dt
Peak Diode Recovery
ei
V/ns
TJ
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Thermal Resistance
Symbol
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case k
–––
0.75
°C/W
RθJA
Junction-to-Ambient (PCB Mounted, steady-state) j
–––
40
3.8
200
5.0
20
A
°C
300
-55 to + 175
± 20
1.3
519
95
Max.
162
h
115
h
650
75
Description
Specifically designed for Automotive applications, this
Stripe Planar design of HEXFET Power MOSFETs
utilizes the latest processing techniques to achieve low
on-resistance per silicon area. This benefit combined with
the fast switching speed and ruggedized device design
thatHEXFETpowerMOSFETsarewellknownfor,provides
the designer with an extremely efficient and reliable
device for use in Automotive and a wide variety of other
applications.
VDSS
40V
RDS(on) typ.
3.5m
Ω
max.
4.0m
Ω
ID (Silicon Limited)
162Ah
ID (Package Limited)
75A
相關(guān)PDF資料
PDF描述
AUIRF1404L 75 A, 40 V, 0.004 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
AUIRF1404STRL 75 A, 40 V, 0.004 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
AUIRF1404ZSTRR 160 A, 40 V, 0.0037 ohm, N-CHANNEL, Si, POWER, MOSFET
AUIRF1404ZSTRL 160 A, 40 V, 0.0037 ohm, N-CHANNEL, Si, POWER, MOSFET
AUIRF1404Z 160 A, 40 V, 0.0037 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AUIRF1404Z 功能描述:MOSFET AUTO 40V 1 N-CH HEXFET 3.7mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
AUIRF1404ZL 功能描述:MOSFET AUTO 40V 1 N-CH HEXFET 3.7mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
AUIRF1404ZS 功能描述:MOSFET AUTO 40V 1 N-CH HEXFET 3.7mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
AUIRF1404ZSTRL 功能描述:MOSFET AUTO 40V 1 N-CH HEXFET 3.7mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
AUIRF1404ZSTRR 功能描述:MOSFET AUTO 40V 1 N-CH HEXFET 3.7mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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