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參數資料
| 型號： | AUIRF1405 |
| 元件分類： | JFETs |
| 英文描述： | 75 A, 55 V, 0.0053 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件頁數： | 1/11頁 |
| 文件大小： | 206K |
| 代理商： | AUIRF1405 |
HEXFET Power MOSFET
06/23/11
www.irf.com
1
AUIRF1405
PD - 97691
V(BR)DSS
55V
RDS(on) typ.
4.6m
Ω
max
5.3m
Ω
ID (Silicon Limited)
169Ah
ID (Package Limited)
75A
S
D
G
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Features
l
Advanced Planar Technology
l
Low On-Resistance
l
Dynamic dv/dt Rating
l
175°COperatingTemperature
l
Fast Switching
l
FullyAvalancheRated
l
RepetitiveAvalancheAllowed
up to Tjmax
l
Lead-Free, RoHS Compliant
l
AutomotiveQualified*
Description
Specifically designed for Automotive applications,
this Stripe Planar design of HEXFET Power
MOSFETs utilizes the latest processing techniques to
achieve low on-resistance per silicon area. This benefit
combined with the fast switching speed and
ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in Automotive and a wide variety of other applications.
HEXFET is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
G
D
S
Gate
Drain
Source
TO-220AB
AUIRF1405
S
D
G
D
Parameter
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
A
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)
IDM
Pulsed Drain Current
PD @TC = 25°C
Power Dissipation
W
Linear Derating Factor
W/°C
VGS
Gate-to-Source Voltage
V
EAS
Single Pulse Avalanche Energy (Thermally Limited)
d
mJ
IAR
Avalanche Current
A
EAR
Repetitive Avalanche Energy
i
mJ
dv/dt
Peak Diode recovery dv/dt
e
V/ns
TJ
Operating Junction and
TSTG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
j
–––
0.45
RθCS
Case-to-Sink, Flat, Greased Surface
0.50
–––
°C/W
RθJA
Junction-to-Ambient
–––
62
-55 to + 175
300 (1.6mm from case )
10 lbf
yin (1.1Nym)
330
2.2
± 20
Max.
169
h
118
h
680
75
560
See Fig.12a, 12b, 15, 16
5.0
AUTOMOTIVE GRADE
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相關代理商/技術參數 |
參數描述 |
|---|---|
| AUIRF1405 | 制造商:International Rectifier 功能描述:N CH MOSFET AUTOMOTIVE 55V 75A TO-22 |
| AUIRF1405ZL | 功能描述:MOSFET AUTO 55V 1 N-CH HEXFET 5.3mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AUIRF1405ZL-308 | 功能描述:MOSFET AUTOMOTIVE MOSFET 55V 75A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AUIRF1405ZS | 功能描述:MOSFET AUTO 55V 1 N-CH HEXFET 5.3mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AUIRF1405ZS-7P | 功能描述:MOSFET N-CH 55V 120A D2PAK-7 制造商:infineon technologies 系列:HEXFET? 包裝:管件 零件狀態:有效 FET 類型:MOSFET N 通道，金屬氧化物 FET 功能:標準 漏源極電壓（Vdss）:55V 電流 - 連續漏極（Id）（25°C 時）:120A（Tc） 不同?Id，Vgs 時的?Rds On（最大值）:4.9 毫歐 @ 88A，10V 不同 Id 時的 Vgs（th）（最大值）:4V @ 150μA 不同 Vgs 時的柵極電荷（Qg）:230nC @ 10V 不同 Vds 時的輸入電容（Ciss）:5360pF @ 25V 功率 - 最大值:230W 工作溫度:-55°C ~ 175°C（TJ） 安裝類型:表面貼裝 封裝/外殼:TO-263-7，D2Pak（6 引線+接片），TO-263CB 供應商器件封裝:D2PAK（7-Lead） 標準包裝:50 |
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