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參數資料
| 型號： | AUIRF7309Q |
| 元件分類： | JFETs |
| 英文描述： | 4 A, 30 V, 0.05 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, MS-012AA |
| 封裝： | ROHS COMPLIANT, SOP-8 |
| 文件頁數： | 1/13頁 |
| 文件大小： | 281K |
| 代理商： | AUIRF7309Q |
AUIRF7309Q
www.irf.com
1
04/04/11
HEXFET Power MOSFET
PD - 97655
AUTOMOTIVE GRADE
Features
l
Advanced Planar Technology
l
Low On-Resistance
l
Dual N and P Channel MOSFET
l
Dynamic dV/dT Rating
l
150°C Operating Temperature
l
Fast Switching
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Lead-Free, RoHS Compliant
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Automotive Qualified*
Description
Specifically designed for Automotive applications,
this cellular design of HEXFET Power MOSFETs
utilizes the latest processing techniques to achieve
low on-resistance per silicon area. This benefit com-
bined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely
efficient and reliable device for use in Automotive and
a wide variety of other applications.
SO-8
AUIRF7309Q
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings
only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure
to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings
are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
HEXFET is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
N-CH P-CH
V(BR)DSS
30V
-30V
RDS(on) max. 0.05Ω 0.10Ω
ID
4.7A
-3.5A
D1
D2
G1
S2
G2
S1
Top View
8
1
2
3
4
5
6
7
P-CHANNEL MOSFET
N-CHANNEL MOSFET
Parameter
Units
N-Channel
P-Channel
ID @ TA = 25°C
10 Sec. Pulsed Drain Current, VGS @ 10V
4.7
-3.5
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V
4-3.0
ID @ TA = 70°C
Continuous Drain Current, VGS @ 10V
3.2
-2.4
IDM
Pulsed Drain Current
c
16
-12
PD @TA = 25°C
Power Dissipation
f
Linear Derating Factor
f
W/°C
VGS
Gate-to-Source Voltage
V
dv/dt
Peak Diode Recovery dv/dt
d
6.9
-6.0
V/ns
TJ
Operating Junction and
TSTG
Storage Temperature Range
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJA
Junction-to-Ambient (PCB Mount, steady state)
f
–––
90
°C/W
-55 to + 150
Max.
1.4
0.011
± 20
W
A
°C
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相關代理商/技術參數 |
參數描述 |
|---|---|
| AUIRF7309QTR | 功能描述:MOSFET AUTO 30V 1 N-CH HEXFET 50mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AUIRF7313Q | 功能描述:MOSFET Dual N-Ch 30V 6.5A Automotive MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AUIRF7313QTR | 功能描述:MOSFET Dual N-Ch 30V 6.5A Automotive MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AUIRF7316Q | 功能描述:MOSFET AUTO -30V DUAL P-CH HEXFET 0.042 RDSon RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AUIRF7316QTR | 功能描述:MOSFET AUTO -30V DUAL P-CH HEXFET 0.042 RDSon RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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