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參數資料
| 型號： | AUIRFB4610 |
| 元件分類： | JFETs |
| 英文描述： | 73 A, 100 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件頁數： | 1/13頁 |
| 文件大小： | 340K |
| 代理商： | AUIRFB4610 |
07/20/10
www.irf.com
1
AUIRFB4610
AUIRFS4610
HEXFET Power MOSFET
S
D
G
PD - 96325
D2Pak
AUIRFS4610
TO-220AB
AUIRFB4610
S
D
G
D
S
D
G
D
AUTOMOTIVE GRADE
Specifically designed for Automotive applications, this HEXFET
Power MOSFET utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional features of
this design are a 175°C junction operating temperature, fast
switching speed and improved repetitive avalanche rating . These
features combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a wide variety
of other applications.
Description
l
Advanced Process Technology
l
Ultra Low On-Resistance
l
Enhanced dV/dT and dI/dT capability
l
175°C Operating Temperature
l
Fast Switching
l
Repetitive Avalanche Allowed up to Tjmax
l
Lead-Free, RoHS Compliant
l
Automotive Qualified *
Features
HEXFET is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
V(BR)DSS
100V
RDS(on) typ.
11m
:
max.
14m
:
ID
73A
GD
S
Gate
Drain
Source
Absolute Maximum Ratings
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.
Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
IDM
Pulsed Drain Current
f
PD @TC = 25°C
Maximum Power Dissipation
W
Linear Derating Factor
W/°C
VGS
Gate-to-Source Voltage
V
EAS
Single Pulse Avalanche Energy (Thermally limited)
d
mJ
IAR
Avalanche Current
A
EAR
Repetitive Avalanche Energy
mJ
dV/dt
Peak Diode Recovery
e
V/ns
TJ
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
j
–––
0.77
RθCS
Case-to-Sink, Flat Greased Surface , TO-220
0.50
–––
°C/W
RθJA
Junction-to-Ambient, TO-220
–––
62
RθJA
Junction-to-Ambient (PCB Mount) , D2Pak
i
–––
40
10lbf
xin (1.1Nxm)
300
Max.
73
52
290
A
°C
370
See Fig. 14, 15, 16a, 16b,
190
7.6
-55 to + 175
± 20
1.3
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