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參數資料
| 型號： | AUIRFS3607 |
| 元件分類： | JFETs |
| 英文描述： | 80 A, 75 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封裝： | ROHS COMPLIANT, PLASTIC, D2PAK-3 |
| 文件頁數： | 1/12頁 |
| 文件大小： | 280K |
| 代理商： | AUIRFS3607 |
08/16/11
www.irf.com
1
AUIRFS3607
AUIRFSL3607
HEXFET Power MOSFET
S
D
G
VDSS
75V
RDS(on) typ.
7.34m
:
max.
9.0m:
ID
80A
GD
S
Gate
Drain
Source
D2Pak
AUIRFS3607
TO-262
AUIRFSL3607
S
D
G
D
S
G
Specifically designed for Automotive applications, this
HEXFET Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per silicon
area. Additional features of this design are a 175°C junction
operating temperature, fast switching speed and improved
repetitive avalanche rating . These features combine to make
this design an extremely efficient and reliable device for use in
Automotiveapplicationsandawidevarietyofotherapplications.
Description
Features
l
Advanced Process Technology
l
Low On-Resistance
l
175°C Operating Temperature
l
Fast Switching
l
Repetitive Avalanche Allowed up to Tjmax
l
Lead-Free, RoHS Compliant
l
Automotive Qualified *
AUTOMOTIVE GRADE
Absolute Maximum Ratings
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications
is not implied.
Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal
resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA)
is 25°C, unless otherwise specified.
HEXFET is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
PD - 96402
Parameter
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
IDM
Pulsed Drain Current
PD @TC = 25°C
Maximum Power Dissipation
W
Linear Derating Factor
W/°C
VGS
Gate-to-Source Voltage
V
dv/dt
Peak Diode Recovery
e
V/ns
EAS (Thermally limited)
Single Pulse Avalanche Energy d
mJ
IAR
Avalanche Current
A
EAR
Repetitive Avalanche Energy f
mJ
TJ
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
j
–––
1.045
RθJA
Junction-to-Ambient (PCB Mount) , D2Pak i
–––
40
Max.
80
56
310
0.96
300(1.6mm from case)
°C
A
°C/W
120
46
14
140
27
-55 to + 175
± 20
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相關代理商/技術參數 |
參數描述 |
|---|---|
| AUIRFS3607TRL | 功能描述:MOSFET 75V 80A 9 mOhm Automotive MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AUIRFS3607TRR | 功能描述:MOSFET 75V 80A 9 mOhm Automotive MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AUIRFS3806 | 功能描述:MOSFET AUTO 60V 1 N-CH HEXFET 15.8mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AUIRFS3806 | 制造商:International Rectifier 功能描述:N CH MOSFET AUTOMOTIVE 60V 43A TO-26 |
| AUIRFS3806TRL | 功能描述:MOSFET AUTO 60V 1 N-CH HEXFET 15.8mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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