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參數(shù)資料
| 型號： | AUIRFS4010-7P |
| 元件分類： | JFETs |
| 英文描述： | 190 A, 100 V, 0.004 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, D2PAK-7 |
| 文件頁數(shù)： | 1/11頁 |
| 文件大?。?/td> | 339K |
| 代理商： | AUIRFS4010-7P |
08/15/11
www.irf.com
1
HEXFET Power MOSFET
S
D
G
PD - 96397
AUIRFS4010-7P
VDSS
100V
RDS(on) typ.
3.3m
Ω
max.
4.0m
Ω
ID
190A
GD
S
Gate
Drain
Source
D2Pak 7 Pin
AUIRFS4010-7P
G
S
D
S
Description
Specifically designed for Automotive applications, this
HEXFET Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per silicon
area. Additional features of this design are a 175°C junction
operating temperature, fast switching speed and improved
repetitive avalanche rating . These features combine to make
this design an extremely efficient and reliable device for use
in Automotive applications and a wide variety of other
applications.
Features
l
Advanced Process Technology
l
Ultra Low On-Resistance
l
Enhanced dV/dT and dI/dT capability
l
175°C Operating Temperature
l
Fast Switching
l
Repetitive Avalanche Allowed up to Tjmax
l
Lead-Free, RoHS Compliant
l
Automotive Qualified *
AUTOMOTIVE GRADE
HEXFET is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
Absolute Maximum Ratings
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications
is not implied.
Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal
resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA)
is 25°C, unless otherwise specified.
Parameter
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
IDM
Pulsed Drain Current
c
PD @TC = 25°C
Maximum Power Dissipation
W
Linear Derating Factor
W/°C
VGS
Gate-to-Source Voltage
V
EAS
Single Pulse Avalanche Energy (Thermally Limited)
d
mJ
IAR
Avalanche Current
c
A
EAR
Repetitive Avalanche Energy
c
mJ
dv/dt
Peak Diode Recovery
e
V/ns
TJ
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
jk
–––
0.40
RθJA
Junction-to-Ambient (PCB Mount)
i
–––
40
-55 to + 175
± 20
2.5
Max.
190
130
740
A
°C
°C/W
300
330
See Fig. 14, 15, 22a, 22b
380
26
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AUIRFS4010-7TRL | 190 A, 100 V, 0.004 ohm, N-CHANNEL, Si, POWER, MOSFET |
| AUIRFS4010-7TRR | 190 A, 100 V, 0.004 ohm, N-CHANNEL, Si, POWER, MOSFET |
| AUIRFS4010TRR | 180 A, 100 V, 0.0047 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| AUIRFS4010TRL | 180 A, 100 V, 0.0047 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| AUIRFS4010 | 180 A, 100 V, 0.0047 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AUIRFS4010-7TRL | 功能描述:MOSFET 100V 190A 4 mOhm Automotive MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AUIRFS4010-7TRR | 功能描述:MOSFET 100V 190A 4 mOhm Automotive MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AUIRFS4010TRL | 功能描述:MOSFET 100V 170A 4.7 mOhm Automotive MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AUIRFS4010TRR | 功能描述:MOSFET 100V 170A 4.7 mOhm Automotive MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AUIRFS4115 | 功能描述:MOSFET N-CH 150V 99A D2PAK 制造商:infineon technologies 系列:HEXFET? 包裝:管件 零件狀態(tài):有效 FET 類型:MOSFET N 通道，金屬氧化物 FET 功能:標準 漏源極電壓（Vdss）:150V 電流 - 連續(xù)漏極（Id）（25°C 時）:99A（Tc） 不同?Id，Vgs 時的?Rds On（最大值）:12.1 毫歐 @ 62A，10V 不同 Id 時的 Vgs（th）（最大值）:5V @ 250μA 不同 Vgs 時的柵極電荷（Qg）:120nC @ 10V 不同 Vds 時的輸入電容（Ciss）:5270pF @ 50V 功率 - 最大值:375W 工作溫度:-55°C ~ 175°C（TJ） 安裝類型:表面貼裝 封裝/外殼:TO-263-3，D2Pak（2 引線+接片），TO-263AB 供應商器件封裝:D2PAK 標準包裝:50 |
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