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參數資料
| 型號： | AUIRFS4010 |
| 元件分類： | JFETs |
| 英文描述： | 180 A, 100 V, 0.0047 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封裝： | ROHS COMPLIANT, PLASTIC, D2PAK-3 |
| 文件頁數： | 1/12頁 |
| 文件大小： | 286K |
| 代理商： | AUIRFS4010 |
08/16/11
www.irf.com
1
HEXFET Power MOSFET
S
D
G
PD - 96396
AUIRFS4010
AUIRFSL4010
GD
S
Gate
Drain
Source
D
S
G
D2Pak
AUIRFS4010
S
D
G
D
TO-262
AUIRFSL4010
VDSS
100V
RDS(on) typ.
3.9m
:
max.
4.7m
:
ID
180A
AUTOMOTIVE GRADE
HEXFET is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
Specifically designed for Automotive applications, this
HEXFET Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per
silicon area. Additional features of this design are a 175°C
junction operating temperature, fast switching speed and
improved repetitive avalanche rating . These features
combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a
wide variety of other applications.
Description
Features
l
Advanced Process Technology
l
Ultra Low On-Resistance
l
175°C Operating Temperature
l
Fast Switching
l
Repetitive Avalanche Allowed up to Tjmax
l
Lead-Free, RoHS Compliant
l
Automotive Qualified *
Absolute Maximum Ratings
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications
is not implied.
Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal
resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA)
is 25°C, unless otherwise specified.
Parameter
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
A
IDM
Pulsed Drain Current
c
PD @TC = 25°C
Maximum Power Dissipation
W
Linear Derating Factor
W/°C
VGS
Gate-to-Source Voltage
V
EAS
Single Pulse Avalanche Energy (Thermally Limited)
d
mJ
IAR
Avalanche Current
c
A
EAR
Repetitive Avalanche Energy
c
mJ
dv/dt
Peak Diode Recovery
e
V/ns
TJ
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
jk
–––
0.40
RθJA
Junction-to-Ambient (PCB Mount)
i
–––
40
°C/W
°C
300
375
31
-55 to + 175
± 20
2.5
318
See Fig. 14, 15, 22a, 22b
Max.
180
127
720
相關PDF資料 |
PDF描述 |
|---|---|
| AUIRFSL4010 | 180 A, 100 V, 0.0047 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| AUIRFS4310ZTRR | 120 A, 100 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| AUIRFS4310ZTRL | 120 A, 100 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| AUIRFS4310Z | 120 A, 100 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| AUIRFS4610STRR | 73 A, 100 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
相關代理商/技術參數 |
參數描述 |
|---|---|
| AUIRFS4010-7P | 功能描述:MOSFET 100V 190A 4 mOhm Automotive MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AUIRFS4010-7TRL | 功能描述:MOSFET 100V 190A 4 mOhm Automotive MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AUIRFS4010-7TRR | 功能描述:MOSFET 100V 190A 4 mOhm Automotive MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AUIRFS4010TRL | 功能描述:MOSFET 100V 170A 4.7 mOhm Automotive MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AUIRFS4010TRR | 功能描述:MOSFET 100V 170A 4.7 mOhm Automotive MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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