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參數資料
| 型號： | AUIRFS4310Z |
| 元件分類： | JFETs |
| 英文描述： | 120 A, 100 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封裝： | ROHS COMPLIANT, PLASTIC, D2PAK-3 |
| 文件頁數： | 1/11頁 |
| 文件大?。?/td> | 249K |
| 代理商： | AUIRFS4310Z |
08/22/11
www.irf.com
1
HEXFET Power MOSFET
AUIRFS4310Z
S
D
G
VDSS
100V
RDS(on) typ.
4.8m:
max.
6.0m
:
ID (Silicon Limited)
127A c
ID (Package Limited)
120A
PD - 97715
AUTOMOTIVE GRADE
Description
Specifically designed for Automotive applications, this HEXFET
Power MOSFET utilizes the latest processing techniques to
achieve extremely low on-resistance per silicon area. Additional
featuresofthisdesign area175°Cjunctionoperatingtemperature,
fast switching speed and improved repetitive avalanche rating .
Thesefeaturescombinetomakethisdesignanextremelyefficient
and reliable device for use in Automotive applications and a wide
variety of other applications.
Features
●
Advanced Process Technology
●
Ultra Low On-Resistance
●
Dynamic dv/dt Rating
●
175°C Operating Temperature
●
Fast Switching
●
Repetitive Avalanche Allowed up to Tjmax
●
Lead-Free, RoHS Compliant
●
Automotive Qualified *
HEXFET is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
GD
S
Gate
Drain
Source
D2Pak
AUIRFS4310Z
S
D
G
D
Symbol
Parameter
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
A
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Wire Bond Limited)
IDM
Pulsed Drain Current d
PD @TC = 25°C
Maximum Power Dissipation
W
Linear Derating Factor
W/°C
VGS
Gate-to-Source Voltage
V
EAS
Single Pulse Avalanche Energy (Thermally Limited) e
mJ
IAR
Avalanche Current
d
A
EAR
Repetitive Avalanche Energy
d
mJ
dv/dt
Peak Diode Recovery f
V/ns
TJ
Operating Junction and
°C
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Thermal Resistance
Symbol
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case k
–––
0.6
°C/W
RθJA
Junction-to-Ambient (PCB Mount) j
–––
40
250
18
-55 to + 175
± 20
1.7
300
Max.
127
90
560
120
130
See Fig. 14, 15, 22a, 22b,
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相關代理商/技術參數 |
參數描述 |
|---|---|
| AUIRFS4310ZTRL | 功能描述:MOSFET 100V 127A 6mOhm Automotive MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AUIRFS4310ZTRR | 功能描述:MOSFET 100V 127A 6mOhm Automotive MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AUIRFS4410Z | 功能描述:MOSFET 100V 97A 9mOhm Automotive MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AUIRFS4410ZTRL | 功能描述:MOSFET 100V 97A 9mOhm Automotive MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AUIRFS4410ZTRR | 功能描述:MOSFET 100V 97A 9mOhm Automotive MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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