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參數(shù)資料
型號(hào): AUIRFS4610STRL
元件分類: JFETs
英文描述: 73 A, 100 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
封裝: ROHS COMPLIANT, PLASTIC, D2PAK-3
文件頁(yè)數(shù): 1/13頁(yè)
文件大小: 340K
代理商: AUIRFS4610STRL
07/20/10
www.irf.com
1
AUIRFB4610
AUIRFS4610
HEXFET Power MOSFET
S
D
G
PD - 96325
D2Pak
AUIRFS4610
TO-220AB
AUIRFB4610
S
D
G
D
S
D
G
D
AUTOMOTIVE GRADE
Specifically designed for Automotive applications, this HEXFET
Power MOSFET utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional features of
this design are a 175°C junction operating temperature, fast
switching speed and improved repetitive avalanche rating . These
features combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a wide variety
of other applications.
Description
l
Advanced Process Technology
l
Ultra Low On-Resistance
l
Enhanced dV/dT and dI/dT capability
l
175°C Operating Temperature
l
Fast Switching
l
Repetitive Avalanche Allowed up to Tjmax
l
Lead-Free, RoHS Compliant
l
Automotive Qualified *
Features
HEXFET is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
V(BR)DSS
100V
RDS(on) typ.
11m
:
max.
14m
:
ID
73A
GD
S
Gate
Drain
Source
Absolute Maximum Ratings
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.
Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
IDM
Pulsed Drain Current
f
PD @TC = 25°C
Maximum Power Dissipation
W
Linear Derating Factor
W/°C
VGS
Gate-to-Source Voltage
V
EAS
Single Pulse Avalanche Energy (Thermally limited)
d
mJ
IAR
Avalanche Current
A
EAR
Repetitive Avalanche Energy
mJ
dV/dt
Peak Diode Recovery
e
V/ns
TJ
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
j
–––
0.77
RθCS
Case-to-Sink, Flat Greased Surface , TO-220
0.50
–––
°C/W
RθJA
Junction-to-Ambient, TO-220
–––
62
RθJA
Junction-to-Ambient (PCB Mount) , D2Pak
i
–––
40
10lbf
xin (1.1Nxm)
300
Max.
73
52
290
A
°C
370
See Fig. 14, 15, 16a, 16b,
190
7.6
-55 to + 175
± 20
1.3
相關(guān)PDF資料
PDF描述
AUIRFB4610 73 A, 100 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
AUIRFS4610 73 A, 100 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
AUIRFSL4310 75 A, 100 V, 0.007 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
AUIRFS4310TRR 75 A, 100 V, 0.007 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
AUIRFS4310TRL 75 A, 100 V, 0.007 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AUIRFS4610STRR 制造商:IRF 制造商全稱:International Rectifier 功能描述:AUTOMOTIVE GRADE
AUIRFS4610TRL 功能描述:MOSFET AUTO 100V 1 N-CH HEXFET 14mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
AUIRFS4610TRR 功能描述:MOSFET AUTO 100V 1 N-CH HEXFET 14mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
AUIRFS6535 功能描述:MOSFET Automotive Power MOSFET; 300V 185mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
AUIRFS6535TRL 功能描述:MOSFET Automotive Power MOSFET; 300V 185mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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