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參數(shù)資料
| 型號(hào)： | AUIRFSL4010 |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 180 A, 100 V, 0.0047 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| 封裝： | ROHS COMPLIANT, PLASTIC, TO-262, 3 PIN |
| 文件頁(yè)數(shù)： | 1/12頁(yè) |
| 文件大小： | 286K |
| 代理商： | AUIRFSL4010 |
08/16/11
www.irf.com
1
HEXFET Power MOSFET
S
D
G
PD - 96396
AUIRFS4010
AUIRFSL4010
GD
S
Gate
Drain
Source
D
S
G
D2Pak
AUIRFS4010
S
D
G
D
TO-262
AUIRFSL4010
VDSS
100V
RDS(on) typ.
3.9m
:
max.
4.7m
:
ID
180A
AUTOMOTIVE GRADE
HEXFET is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
Specifically designed for Automotive applications, this
HEXFET Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per
silicon area. Additional features of this design are a 175°C
junction operating temperature, fast switching speed and
improved repetitive avalanche rating . These features
combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a
wide variety of other applications.
Description
Features
l
Advanced Process Technology
l
Ultra Low On-Resistance
l
175°C Operating Temperature
l
Fast Switching
l
Repetitive Avalanche Allowed up to Tjmax
l
Lead-Free, RoHS Compliant
l
Automotive Qualified *
Absolute Maximum Ratings
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications
is not implied.
Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal
resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA)
is 25°C, unless otherwise specified.
Parameter
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
A
IDM
Pulsed Drain Current
c
PD @TC = 25°C
Maximum Power Dissipation
W
Linear Derating Factor
W/°C
VGS
Gate-to-Source Voltage
V
EAS
Single Pulse Avalanche Energy (Thermally Limited)
d
mJ
IAR
Avalanche Current
c
A
EAR
Repetitive Avalanche Energy
c
mJ
dv/dt
Peak Diode Recovery
e
V/ns
TJ
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
jk
–––
0.40
RθJA
Junction-to-Ambient (PCB Mount)
i
–––
40
°C/W
°C
300
375
31
-55 to + 175
± 20
2.5
318
See Fig. 14, 15, 22a, 22b
Max.
180
127
720
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AUIRFSL4010-306 | 制造商:International Rectifier 功能描述:AUTOMOTIVE MOSFET 100V, 170A, 4.7 MOHM, 143 NC QG, D2PAK - Rail/Tube |
| AUIRFSL4115 | 功能描述:MOSFET N CH 150V 99A TO262 制造商:infineon technologies 系列:HEXFET? 包裝:管件 零件狀態(tài):有效 FET 類(lèi)型:MOSFET N 通道，金屬氧化物 FET 功能:標(biāo)準(zhǔn) 漏源極電壓（Vdss）:150V 電流 - 連續(xù)漏極（Id）（25°C 時(shí)）:99A（Tc） 不同?Id，Vgs 時(shí)的?Rds On（最大值）:12.1 毫歐 @ 62A，10V 不同 Id 時(shí)的 Vgs（th）（最大值）:5V @ 250μA 不同 Vgs 時(shí)的柵極電荷（Qg）:120nC @ 10V 不同 Vds 時(shí)的輸入電容（Ciss）:5270pF @ 50V 功率 - 最大值:375W 工作溫度:-55°C ~ 175°C（TJ） 安裝類(lèi)型:通孔 封裝/外殼:TO-262-3，長(zhǎng)引線，I2Pak，TO-262AA 供應(yīng)商器件封裝:TO-262 標(biāo)準(zhǔn)包裝:50 |
| AUIRFSL4310 | 功能描述:MOSFET AUTO 100V 1 N-CH HEXFET 7mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AUIRFSL4310-306 | 功能描述:MOSFET AUTO 100V 1 N-CH HEXFET 7mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AUIRFSL6535 | 制造商:IRF 制造商全稱(chēng):International Rectifier 功能描述:Advanced Process Technology Low On-Resistance |
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