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參數(shù)資料
型號: AUIRFSL3004
元件分類: JFETs
英文描述: 195 A, 40 V, 0.00175 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
封裝: ROHS COMPLIANT, PLASTIC, TO-262, 3 PIN
文件頁數(shù): 1/12頁
文件大小: 287K
代理商: AUIRFSL3004
08/15/11
www.irf.com
1
HEXFET Power MOSFET
S
D
G
GD
S
Gate
Drain
Source
AUIRFS3004
AUIRFSL3004
D2Pak
AUIRFS3004
TO-262
AUIRFSL3004
VDSS
40V
RDS(on) typ.
1.4m
Ω
max.
1.75m
Ω
ID (Silicon Limited)
340Ac
ID (Package Limited)
195A
Specifically designed for Automotive applications, this
HEXFET Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per
silicon area. Additional features of this design are a 175°C
junction operating temperature, fast switching speed and
improved repetitive avalanche rating . These features
combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a
wide variety of other applications.
Description
Features
l
Advanced Process Technology
l
Ultra Low On-Resistance
l
175°C Operating Temperature
l
Fast Switching
l
Repetitive Avalanche Allowed up to Tjmax
l
Lead-Free, RoHS Compliant
l
Automotive Qualified *
AUTOMOTIVE GRADE
Absolute Maximum Ratings
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications
is not implied.
Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal
resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA)
is 25°C, unless otherwise specified.
HEXFET is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
S
D
G
D
S
G
PD - 96400
Parameter
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Package Limited)
IDM
Pulsed Drain Current
d
PD @TC = 25°C
Maximum Power Dissipation
W
Linear Derating Factor
W/°C
VGS
Gate-to-Source Voltage
V
dv/dt
Peak Diode Recovery
f
V/ns
EAS (Thermally limited)
Single Pulse Avalanche Energy e
mJ
IAR
Avalanche Currentd
A
EAR
Repetitive Avalanche Energy d
mJ
TJ
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case kl
–––
0.40
RθJA
Junction-to-Ambient (PCB Mount) , D2Pak
j
–––
40
-55 to + 175
± 20
2.5
Max.
340
240
1310
195
°C/W
A
°C
300
See Fig. 14, 15, 22a, 22b
380
4.4
相關(guān)PDF資料
PDF描述
AUIRFS3004 195 A, 40 V, 0.00175 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
AUIRFS3004TRR 195 A, 40 V, 0.00175 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
AUIRFS3006TRR 195 A, 60 V, 0.0025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
AUIRFS3006TRL 195 A, 60 V, 0.0025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
AUIRFS3006 195 A, 60 V, 0.0025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
相關(guān)代理商/技術(shù)參數(shù)
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